BSP129 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSP129
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 240 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 4.1 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: SOT-223

Búsqueda de reemplazo de MOSFET BSP129

BSP129 Datasheet (PDF)

..1. Size:410K infineon
bsp129.pdf

BSP129SIPMOS Small-Signal-TransistorProduct Summary FeaturesVDS 240 V N-channelRDS(on),max 6 W Depletion modeIDSS,min 0.05 A dv /dt rated Available with V indicator on reelGS(th) Pb-free lead plating; RoHS compliantPG-SOT223 Qualified according to AEC Q101Type Package Tape and Reel Marking Packaging Type Package Tape and Reel Marking Pac

9.1. Size:50K philips
bsp128.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBSP128N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP128D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS dra

9.2. Size:75K philips
bsp126.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBSP126N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP126D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 250 Vvertical D

9.3. Size:50K philips
bsp122.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBSP122N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP122D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS dra

9.4. Size:65K philips
bsp126 cnv 2.pdf

9.5. Size:65K philips
bsp120.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBSP120N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP120D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max. 200 Vvertical D

9.6. Size:50K philips
bsp127.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBSP127N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP127D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS dra

9.7. Size:75K philips
bsp121.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBSP121N-channel enhancement modevertical D-MOS transistor1998 Apr 01Product specificationSupersedes data of April 1995File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP121D-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain source vo

9.8. Size:64K philips
bsp121 cnv 3.pdf

9.9. Size:182K nxp
bsp126.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

9.10. Size:170K nxp
bsp122.pdf

9.11. Size:175K siemens
bsp125.pdf

BSP 125SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 125 600 V 0.12 A 45 SOT-223 BSP 125Type Ordering Code Tape and Reel InformationBSP 125 Q62702-S654 E6327BSP 125 Q67000-S284 E6433Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS

9.12. Size:370K infineon
bsp123.pdf

Rev. 1.5BSP123SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 100 V N-ChannelRDS(on) 6 Enhancement modeID 0.37 A Logic LevelPG-SOT223 dv/dt ratedPb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Tape and Reel Information Marking PackagingPG-SOT223 Non dryBSP123 L6433: 4000 pcs/reel BSP123BSP123

9.13. Size:337K infineon
bsp125.pdf

Rev. 2.1BSP125SIPMOS Power-TransistorProduct SummaryFeatureVDS 600 V N-ChannelRDS(on) 45 Enhancement modeID 0.12 A Logic LevelPG-SOT223 dv/dt rated Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Marking PackagingType Package RoHS compliant Tape and Reel InformationBSP125 PG-SOT223 Yes L6433: 4000 pcs/reel BSP125 No

9.14. Size:1687K cn vbsemi
bsp122.pdf

BSP122www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Available in tape and reelVDS (V) 200 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.2 Repetitive avalanche ratedQg (Max.) (nC) 8.2 Fast switchingQgs (nC) 1.8 Ease of parallelingAvailableQgd (nC) 4.5 Simple drive requirementsConfiguration SingleDSOT-223DGSDGS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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