BSP296N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSP296N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.8 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 1.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tiempo de subida (tr): 3.8 nS
   Conductancia de drenaje-sustrato (Cd): 19.7 pF
   Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm
   Paquete / Cubierta: SOT-223

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BSP296N Datasheet (PDF)

..1. Size:569K infineon
bsp296n.pdf

BSP296NOptiMOS Small-Signal-TransistorProduct Summary FeaturesVDS 100 V N-channelRDS(on),max VGS=10 V 0.6 W Enhancement modeVGS=4.5 V 0.8 Logic level (4.5V rated)ID 1.2 A Avalanche rated Qualified according to AEC Q101PG-SOT223 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Tape and Reel Informati

8.1. Size:298K infineon
bsp296.pdf

Rev. 2.1BSP296SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 100 V N-ChannelRDS(on) 0.7 Enhancement modeID 1.1 A Logic LevelPG-SOT223 dv/dt rated Pb-free lead plating; RoHS compliant4 Qualified according to AEC Q101 321 VPS05163Type Package Tape and Reel Information Marking PackagingPG-SOT223BSP296 L6433: 4000 pcs/reel

8.2. Size:860K cn vbsemi
bsp296.pdf

BSP296www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET A

9.1. Size:169K siemens
bsp299.pdf

BSP 299SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 299 500 V 0.4 A 4 SOT-223 BSP 299Type Ordering Code Tape and Reel InformationBSP 299 Q67000-S225 E6327Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATA

9.2. Size:170K siemens
bsp298.pdf

BSP 298SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 298 400 V 0.5 A 3 SOT-223 BSP 298Type Ordering Code Tape and Reel InformationBSP 298 Q67000-S200 E6327Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATA

9.3. Size:318K infineon
bsp299.pdf

BSP299SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Pin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 299 500 V 0.4 A 4 SOT-223 BSP299Type Pb-free Tape and Reel InformationBSP 299 Yes L6327Maximum Ratings

9.4. Size:372K infineon
bsp297.pdf

Rev. 2.1BSP297SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 200 V N-ChannelRDS(on) 1.8 Enhancement modeID 0.66 A Logic LevelPG-SOT223 dv/dt ratedPb-free lead plating; RoHS compliant4 Qualified according to AEC Q101 321VPS05163PackagingType Package Tape and Reel Information MarkingPG-SOT223BSP297 L6327: 1000 pcs/reel

9.5. Size:381K infineon
bsp295.pdf

Rev 2.2BSP295SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS60 V N-ChannelRDS(on) 0.3 Enhancement modeID 1.8 A dv/dt ratedPG-SOT223Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 4321 VPS05163MarkingType Package Tape and Reel Information Marking PackagingPG-SOT223BSP295 L6327: 1000 pcs/reel BSP295 Non dryMaximum

9.6. Size:373K infineon
bsp298.pdf

BSP298SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.1 ... 4.0 V Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Pin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP298 400 V 0.5 A 3 PG-SOT223 BSP298Type Pb-free Tape and Reel Information PackagingBSP298 Yes L6327 DryMax

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