BSP318S Todos los transistores

 

BSP318S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSP318S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT-223

 Búsqueda de reemplazo de MOSFET BSP318S

 

BSP318S Datasheet (PDF)

 ..1. Size:354K  infineon
bsp318s.pdf

BSP318S
BSP318S

Rev 2.3BSP318SSIPMOS Small-Signal-TransistorFeaturesProduct Summary N-Channel Drain source voltage VDS 60 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.09 Avalanche rated Continuous drain current ID 2.6 A Logic Level4 dv/dt ratedPb-free lead plating; RoHS compliant 3Pin 1 Pin 2, 4 PIN 3 Qualified according to AEC Q101

 8.1. Size:232K  siemens
bsp318.pdf

BSP318S
BSP318S

BSP 318SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 1.2 ...2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 318 60 V 2.6 A 0.15 SOT-223 BSP 318Type Ordering Code Tape and Reel InformationBSP 318 Q67000-S127 E6327Maximum RatingsParameter Symbol Values UnitContinuous dra

 9.1. Size:49K  philips
bsp31 bsp32 bsp33 3.pdf

BSP318S
BSP318S

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BSP31; BSP32; BSP33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationPNP medium power transistors BSP31; BSP32; BSP33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP

 9.2. Size:73K  st
bsp30 bsp31 bsp32 bsp33.pdf

BSP318S
BSP318S

BSP30/31BSP32/33MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BSP40, BSP41,1BSP42 AND BSP43 RESPECTIVELYSOT-223INTERNAL SCH

 9.3. Size:46K  st
bsp31 bsp33.pdf

BSP318S
BSP318S

BSP31BSP33SMALL SIGNAL PNP TRANSISTORSPRELIMINARY DATAOrdering Code MarkingBSP31 P31BSP33 P33 SILICON EPITAXIAL PLANAR PNP MEDIUMVOLTAGE TRANSISTORS2 SOT-223 PLASTIC PACKAGE FORSURFACE MOUNTING CIRCUITS3 TAPE AND REEL PACKING2 THE NPN COMPLEMENTARY TYPES ARE1BSP41 AND BSP43 RESPECTIVELYSOT-223APPLICATIONS MEDIUM VOLTAGE LOAD SWITCHTRANSISTORS OUT

 9.4. Size:321K  nxp
bsp31 bsp32 bsp33.pdf

BSP318S
BSP318S

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.5. Size:43K  diodes
bsp31 bsp33.pdf

BSP318S

SOT223 PNP SILICON PLANARBSP31MEDIUM POWER TRANSISTORSBSP33ISSUE 3 FEBRUARY 1996 T T C T I D T I D i i IIECBABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T T T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI II V V I V I V I II i V V I V I 8

 9.6. Size:401K  infineon
bsp316p.pdf

BSP318S
BSP318S

BSP316PSIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS -100 V P-ChannelRDS(on) 1.8 Enhancement modeID -0.68 A Logic LevelPG-SOT223-4-1 dv/dt ratedDrainpin 2/4Gate Qualified according to AEC Q101 pin1 HalogenfreeaccordingtoIE C61249221Sourcepin 3Type Package Tape and Reel Information Marking Packa

 9.7. Size:116K  infineon
bsp317.pdf

BSP318S
BSP318S

BSP 317SIPMOS Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 317 -200 V -0.37 A 6 SOT-223Type Ordering Code Tape and Reel InformationBSP 317 Q67000-S94 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS -200 VVDrain-

 9.8. Size:94K  infineon
bsp315p.pdf

BSP318S
BSP318S

Preliminary dataBSP 315 PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.8 Avalanche ratedContinuous drain current ID -1.17 A Logic Level4 dv/dt rated321VPS05163Type Package Ordering Code Pin 1 Pin2/4 PIN 3BSP 315 P SOT-223 Q67042-S4004 G D SMaximum

 9.9. Size:118K  infineon
bsp316.pdf

BSP318S
BSP318S

BSP 316SIPMOS Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 316 -100 V -0.65 A 2.2 SOT-223 BSP 316Type Ordering Code Tape and Reel InformationBSP 316 Q67000-S92 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS -100 V

 9.10. Size:406K  infineon
bsp317p.pdf

BSP318S
BSP318S

BSP317PSIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS -250 V P-ChannelRDS(on) 4 Enhancement modeID -0.43 A Logic LevelPG-SOT223 dv/dt ratedDrain4pin 2/4Gate Qualified according to AEC Q101 pin13Source2pin 31VPS05163Type Package Tape and Reel Information Marking PackagingPG-SOT223BSP317P Non dryBS

 9.11. Size:115K  infineon
bsp319.pdf

BSP318S
BSP318S

BSP 319SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 1.2 ...2.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 319 50 V 3.8 A 0.07 SOT-223 BSP 319Type Ordering Code Tape and Reel InformationBSP 319 Q67000-S273 E6327Maximum RatingsParameter Symbol Values UnitContinuous dra

 9.12. Size:471K  infineon
bsp315p .pdf

BSP318S
BSP318S

BSP315PSIPMOS Small-Signal-TransistorFeaturesProduct Summary P-Channel Drain source voltage VDS -60 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.8 Avalanche rated Continuous drain current ID -1.17 A Logic Level4 dv/dt ratedPin 1 Pin2/4 PIN 33 Qualified according to AEC Q101 2G D S1VPS05163Type Package Tape and Reel In

 9.13. Size:818K  cn vbsemi
bsp315p.pdf

BSP318S
BSP318S

BSP315Pwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Paramete

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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