BSP89L6327 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSP89L6327
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 240 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 11.2 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
Paquete / Cubierta: SOT-223
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BSP89L6327 Datasheet (PDF)
bsp89l6327.pdf
Rev. 2.1BSP89SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 240 V N-ChannelRDS(on) 6 Enhancement modeID 0.35 A Logic LevelPG-SOT223 dv/dt rated Pb-free lead plating; RoHS compliant44.5V rated ee lead plating; RoHS compliant Qualified according to AEC Q101 321VPS05163Type Package Tape and Reel Information Marking Packag
bsp89.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BSP89N-channel enhancement modevertical D-MOS transistorProduct specification 2001 May 18Supersedes data of 1997 Jun 23Philips Semiconductors Product specificationN-channel enhancement modeBSP89vertical D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITet
bsp89 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP89N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP89D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER MAX. UNITetc.VDS drain
bsp89.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SK840303
History: SK840303
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918