BSS131 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TypeBSS131SIPMOS Small-Signal-TransistorProduct SummaryFeatureVDS 240 V N-ChannelRDS(on),max 14 Enhancement modeID 0.1 A Logic level dv /dt rated Pb-free lead-plating; RoHS compliantPG-SOT-23 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21Type Package Pb-free Tape and Reel Information MarkingBSS131 PG-SOT23 Yes

BSS131Small-Signal-Transistor3 Features N-Channel2 Enhancement mode1. Gate Logic level2. Source1 3. Drain dv /dt rated Simplified outline(SOT-23) Product SummaryDV 240 VDSR 14DS(on),maxGI 0.1 ASD Absolute Maximum Ratings Ta = 25Parameter Symbol Conditions Value UnitI T =25 CContinuous drain

May 2010BSS138KN-Channel Logic Level Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant Green Compound ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101CDS

October 2005BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize

December 2010BSS138WN-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode field effect RDS(ON) = 3.5 @ VGS = 10V, ID = 0.22Atransistor. These products have been designed to RDS(ON) = 6.0 @ VGS = 4.5V, ID = 0.22Aminimize on-state resistance while provide rugged, High density cell design for extremely

October 2005BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize

BSS138BK60 V, 360 mA N-channel Trench MOSFETRev. 1 4 August 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up to 1.5 kV V

BSS138AKA60 V, single N-channel Trench MOSFET29 April 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltag

BSS138BKS60 V, 320 mA dual N-channel Trench MOSFETRev. 1 12 August 2011 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible ESD protection up t

BSS138PS60 V, 320 mA dual N-channel Trench MOSFETRev. 1 2 November 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Tr

BSS138PW60 V, 320 mA N-channel Trench MOSFETRev. 1 2 November 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFE

BSS138P60 V, 360 mA N-channel Trench MOSFETRev. 1 2 November 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET te

SIPMOS Small-Signal Transistor BSS 135 VDS 600 V ID 0.080 A RDS(on) 60 N channel Depletion mode High dynamic resistance32 Available grouped in VGS(th)1Type Ordering Tape and Reel Pin Configuration Marking PackageCode Information1 2 3BSS 135 Q67000-S237 E6325: 2000 pcs/carton; G D S SS135 TO-92AmmopackMaximum RatingsParameter Symbol Values UnitDrain-sou

BSS138WN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish

BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Low Input Capacitance Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Matte Tin Finish A

BSS138N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

BSS138DWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound (Note 6). UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensi

BSS138N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

BSS138N SIPMOS Small-Signal-TransistorProduct SummaryFeaturesV 60 VDS N-channelR 3.5DS(on),max Enhancement modeI 0.23 AD Logic level dv /dt rated Pb-free lead-plating; RoHS compliantPG-SOT-23 Qualified according to AEC Q101Type Package Tape and Reel MarkingBSS138N PG-SOT-23 L6327: 3000 SKsBSS138N PG-SOT-23 L6433: 10000 SKsParameter

BSS138W SIPMOS Small-Signal-TransistorProduct SummaryFeaturesV 60 VDS N-channelR 3.5DS(on),max Enhancement modeI 0.28 AD Logic level dv /dt rated Pb-free lead-plating; RoHS compliantPG-SOT-323 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21Type Package Tape and Reel MarkingBSS138W PG-SOT-323 H SWs6327: 3

BSS 138SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0VPin 1 Pin 2 Pin 3G S DType VDS ID RDS(on) Package MarkingBSS 138 50 V 0.22 A 3.5 SOT-23 SSsType Ordering Code Tape and Reel InformationBSS 138 Q67000-S566 E6327BSS 138 Q67000-S216 E6433Maximum RatingsParameter Symbol Values UnitDrain source voltage VD

BSS139SIPMOS Small-Signal-TransistorProduct SummaryFeaturesV 250 VDS N-channelR 30DS(on),max Depletion modeI 0.03 ADSS,min dv /dt rated Available with V indicator on reelGS(th) Pb-free lead-plating; RoHS compliantPG-SOT-23 Halogen free according to IEC61249-2-21 Qualified according to AEC Q101Type Package Tape and Reel Information

Features Maximum Ratings

Features ESD protected:1500V High Dense Cell Design For Extremely Low RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings Operating Junction

BSS138Features High Dense Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Surface Mount Package Epoxy Meets UL 94 V-0 Flammability RatingN-Channel MOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering In

BSS138LT1Preferred DevicePower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelL

BSS138LT1Power MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage Applica

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2005BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize

BSS138L, BVSS138LPower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inwww.onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage Ap

UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology andfeatures low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequenc

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 3.5@10V50 V220mA1. GATE 6@4.5V2. SOURCE 3. DRAIN FEATURE APPLICATION Direct Logic-Level Interface: TTL/CMOS High density cell design for extremely low RDS(on) Rugged and Relaible Drivers: Relays

BSS138 SOT-23 Plastic-Encapsulate NMOSFETS ID SOT-23 V(BR)DSS RDS(on)MAX 3.5@10V50V220mA1. GATE6@4.5V2. SOURCE3. DRAINFEATURE APPLICATION Direct Logic-Level Interface: TTL/CMOS High density cell design for extremely low RDS(on) Rugged and Relaible Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Sys

BSS138W3 DRAINN-Channel POWER MOSFETP b Lead(Pb)-Free3121Description:GATE* Typical applications are dcdc converters, SOT-323(SC-70) power management in portable and batterypowered2 SOURCE products such as computers, printers, PCMCIA cards, cellular and cordless telephones.Features:* Simple Drive Requirement* Small Package OutlineMaximum Ratings (TA=2

BSS138Small Signal MOSFETN-Channel3 DRAINSOT-23Features:31*Low On-Resistance : 3.5 GATE1 *Low Input Capacitance: 40PF2*Low Out put Capacitance : 12PF 2SOURCE*Low Threshole :1 .5V*Fast Switching Speed : 20nsApplication:* DC to DC Converter* Cellular & PCMCIA Card* Cordless Telephone* Power Management in Portable and Battery etc.Maximum Ratings (TA

FM120-M WILLASTHRUBSS 8LT1200 mAmps, 50 VoltsPower MOSFETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim

FM120-M WILLASBSS138WT1THRU200 mAmps, 50 VoltsPower MOSFETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim

Shenzhen Tuofeng Semiconductor Technology Co., Ltd BSS138BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. Th

Spec. No. : C834C3 Issued Date : 2012.06.25 CYStech Electronics Corp. Revised Date : 2014.08.20 Page No. : 1/9 50V N-Channel Enhancement Mode MOSFET BVDSS 50V BSS138C3 ID 250mA RDSON@VGS=10V, ID=220mA 1.1(typ) RDSON@VGS=4.5V, ID=220mA 1.3(typ) RDSON@VGS=2.5V,ID=220mA 1.7(typ) RDSON@VGS=4V,ID=100mA Features 1.3(typ) Simple drive requirement RDSON@VGS=2.

BSS138 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features SOT-23 Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package. / Applications

BSS139 Rev.A Aug.-2017 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features SOT-23 1500V Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package.ESD protected up to 1500V / A

LBSS139LT1GS-LBSS139LT1GPower MOSFET200 mAmps, 50 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Low threshold voltage (VGS(th):

LBSS138WT1GS-LBSS138WT1GPower MOSFET200 mAmps, 50 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low threshold voltage (VGS(th):

LBSS139DW1T1GS-LBSS139DW1T1GPower MOSFET200 mAmps, 50 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low threshold voltage (VGS(t

LESHAN RADIO COMPANY, LTD.Power MOSFETLBSS138LT1G200 mAmps, 50 Volts S-LBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicat

SMD Type MOSFETN-Channel MOSFETBSS138E (KSS138E)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 50V ID = 300 mA (VGS = 10V)1 2+0.02+0.1 RDS(ON) 2.5 (VGS = 10V)0.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 3.5 (VGS =2.5V) Low On-Resistance ESD Rating: 1.5KV HBM1. Gate2. Source3. Drain Absolute M

SMD Type MOSFETN-Channel MOSFETBSS138 (KSS138)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 50V ID = 200 mA (VGS = 10V)1 2+0.02+0.10.15 -0.02 RDS(ON) 3.5 (VGS = 10V) 0.95 -0.1+0.11.9 -0.2 Fast Switching Speed Low On-Resistance1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Sym

SMD Type MOSFETN-Channel MOSFETBSS138 (KSS138)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 50V ID = 200 mA (VGS = 10V)1 2 RDS(ON) 3.5 (VGS = 10V)+0.1+0.050.95-0.1 0.1-0.01+0.1 Fast Switching Speed1.9-0.1 Low On-Resistance1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol R

N-Channel MOSFETBSS138 (KSS138) 3 D 12 G S

SMD Type MOSFETN-Channel MOSFETBSS138E (KSS138E)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 50V ID = 300 mA (VGS = 10V)1 2 RDS(ON) 2.5 (VGS = 10V)+0.1+0.050.95-0.1 0.1-0.01+0.1 RDS(ON) 3.5 (VGS =2.5V)1.9-0.1 Low On-Resistance ESD Rating: 1.5KV HBM1. Gate2. Source3. Drain Absolute Maximum

BSS13850V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=40.120(3.04) RDS(ON), VGS@2.5V,IDS@100mA=60.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition0.056(1.40)0.047(1.20) Specially Des

MOSFETBSS138-G N-Channel 50-V(D-S) MOSFETRoHS DeviceFeatures1 : Gate SOT-23 -High density cell design for extremely low RDS(ON).2 : Source3 : Drain -Rugged and Reliable.0.118(3.00)0.110(2.80)30.055(1.40)0.047(1.20)Mechanical data1 2 -Case: SOT-23, molded plastic.0.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, 0.006(0.15)method 2026.0.

GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement 50V/0.2A , RDS(ON)=3.5@VGS=5V mode field effect transistors are produced using 50V/0.2A , RDS(ON)=10@VGS=2.75V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to min

Lead FreeRoHS CompliantMEIBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicationsSOT 23 (TO236AB) Miniatu

BSS138N-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsN-Channel Enhancement-Mode MOS FETsMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Max UnitDrain-Source VoltageBVDSS 50 VGate- Source VoltageVGS +20 VDrain Current (continuous)IDR 220 mADrain Current (pulsed)IDRM 880 m

RUMWTypeUMW BSS138UMW BSS138UMW BSS138SMDN-Channel MOSFET Features VDS (V) = 50VSOT23 ID = 300 mA (VGS = 10V) RDS(ON) 2.5 (VGS = 10V) RDS(ON) 3.5 (VGS =2.5V) Low On-Resistance ESD Rating: 1.5KV HBM1. GATE MARKING2. SOURCE 3. DRAIN S S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V

BSS138 N-Channel 50V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: SSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Max Unit Drain-So

BSS138 N-Ch 50V Fast Switching MOSFETs Description Product Summary VDS 50 V The BSS138 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 3.4 gate charge for most of the synchronous buck converter applications. ID 230 mA The BSS138 meet the RoHS and Green Product requirement with full function reliability approved. Green

BSS138 MOSFET(N-Channel)V(BR)DSS RDS(ON)MAX IDSOT-23 3.5@10V50V 0.22ASOT-23 Plastic-Encapsulate MOSFET6@4.5VSOT-23 Features TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter. Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package. UL Epoxy

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSBSS138N-Channel 30-V(D-S) MOSFETBSS138V(BR)DSS RDS(on)MAX IDSOT-233.5@ 10V350V 0.22A1.GATE6.0@ 4.5V2.SOURCE3.DRAIN 12 Features 1) Low on-resistance. 2) Fast sw itching speed. MARKING Equivalent Circuit3) Drive circuits can be simple. 4) Parallel use is easy. 5) ESD

WSTBSS138N-Ch MOSFETGeneral Description Product SummeryThe WSTBSS138 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate 110m 60V 2.1A charge for most of the synchronous buck converter applications . Applications The WSTBSS138 meet the RoHS and Green Product requirement , 100% EAS guara

BSS138Kwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

BSS138Wwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2 at VGS = 10 V60 300 Low On-Resistance: 2 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 nsSOT-323 Low Input and Output LeakageSC-70 (3-LEADS) TrenchFET P

LBSS139LT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG

BSS138www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

BSS138DWwww.VBsemi.twDual N-Channel 60 V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (mA) Halogen-free According to IEC 61249-2-21 Definition2.5 at VGS = 10 V60 300Low On-Resistance:2.5 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 nsSOT-363 Low Input and Output LeakageSC-70 TrenchFET

RoHS COMPLIANT BSS138W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /

RoHS COMPLIANT BSS138 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / O

RoHS COMPLIANT BSS138DW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /

SOT-23 Plastic-Encapsulate MOSFETSBSS138 N-Channel 50-V(D-S) MOSFET SOT-23 FEATURE Low On-Resistance Low Gate Threshold Voltage 1. GATE Fast Switching Speed 2. SOURCE 3. DRAI Low Input / Output Leakage Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 V Continuous Gate-Source Voltage VGSS 12 Continuous D