BSS131 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:439K infineon
bss131.pdf pdf_icon

Type BSS131 SIPMOS Small-Signal-Transistor Product Summary Feature VDS 240 V N-Channel RDS(on),max 14 Enhancement mode ID 0.1 A Logic level dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-23 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Pb-free Tape and Reel Information Marking BSS131 PG-SOT23 Yes

..2. Size:2339K slkor
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BSS131 Small-Signal-Transistor 3 Features N-Channel 2 Enhancement mode 1. Gate Logic level 2. Source 1 3. Drain dv /dt rated Simplified outline(SOT-23) Product Summary D V 240 V DS R 14 DS(on),max G I 0.1 A S D Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Value Unit I T =25 C Continuous drain

9.1. Size:288K fairchild semi
bss138k.pdf pdf_icon

May 2010 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant Green Compound ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101C D S

9.2. Size:99K fairchild semi
bss138 d87z bss138 l99z.pdf pdf_icon

October 2005 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize

9.3. Size:212K fairchild semi
bss138w.pdf pdf_icon

December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect RDS(ON) = 3.5 @ VGS = 10V, ID = 0.22A transistor. These products have been designed to RDS(ON) = 6.0 @ VGS = 4.5V, ID = 0.22A minimize on-state resistance while provide rugged, High density cell design for extremely

9.4. Size:121K fairchild semi
bss138.pdf pdf_icon

October 2005 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize

9.5. Size:1581K nxp
bss138bk.pdf pdf_icon

BSS138BK 60 V, 360 mA N-channel Trench MOSFET Rev. 1 4 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1.5 kV V

9.6. Size:247K nxp
bss138aka.pdf pdf_icon

BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltag

9.7. Size:348K nxp
bss138bks.pdf pdf_icon

BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up t

9.8. Size:915K nxp
bss138ps.pdf pdf_icon

BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Tr

9.9. Size:899K nxp
bss138pw.pdf pdf_icon

BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFE

9.10. Size:172K nxp
bss138p.pdf pdf_icon

BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET te

9.11. Size:318K siemens
bss135.pdf pdf_icon

SIPMOS Small-Signal Transistor BSS 135 VDS 600 V ID 0.080 A RDS(on) 60 N channel Depletion mode High dynamic resistance 3 2 Available grouped in VGS(th) 1 Type Ordering Tape and Reel Pin Configuration Marking Package Code Information 1 2 3 BSS 135 Q67000-S237 E6325 2000 pcs/carton; G D S SS135 TO-92 Ammopack Maximum Ratings Parameter Symbol Values Unit Drain-sou

9.12. Size:89K diodes
bss138w.pdf pdf_icon

BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-323 Low Gate Threshold Voltage Case Material Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminals Matte Tin Finish

9.13. Size:381K diodes
bss138.pdf pdf_icon

BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT23 Low Gate Threshold Voltage Case Material Molded Plastic. UL Flammability Classification Low Input Capacitance Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals Matte Tin Finish A

9.14. Size:89K diodes
bss138 1.pdf pdf_icon

9.15. Size:109K diodes
bss138dw.pdf pdf_icon

BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-363 Low Gate Threshold Voltage Case Material Molded Plastic. Green Molding Compound (Note 6). UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensi

9.16. Size:98K diodes
bss138ta bss138tc.pdf pdf_icon

9.17. Size:210K infineon
bss138n.pdf pdf_icon

BSS138N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 3.5 DS(on),max Enhancement mode I 0.23 A D Logic level dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-23 Qualified according to AEC Q101 Type Package Tape and Reel Marking BSS138N PG-SOT-23 L6327 3000 SKs BSS138N PG-SOT-23 L6433 10000 SKs Parameter

9.18. Size:351K infineon
bss138w.pdf pdf_icon

BSS138W SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 3.5 DS(on),max Enhancement mode I 0.28 A D Logic level dv /dt rated Pb-free lead-plating; RoHS compliant PG-SOT-323 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking BSS138W PG-SOT-323 H SWs 6327 3

9.19. Size:91K infineon
bss138.pdf pdf_icon

BSS 138 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 SOT-23 SSs Type Ordering Code Tape and Reel Information BSS 138 Q67000-S566 E6327 BSS 138 Q67000-S216 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VD

9.20. Size:679K infineon
bss139.pdf pdf_icon

BSS139 SIPMOS Small-Signal-Transistor Product Summary Features V 250 V DS N-channel R 30 DS(on),max Depletion mode I 0.03 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead-plating; RoHS compliant PG-SOT-23 Halogen free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Tape and Reel Information

9.21. Size:367K mcc
bss138w.pdf pdf_icon

Features Maximum Ratings

9.22. Size:1004K mcc
bss138akdw.pdf pdf_icon

Features ESD protected 1500V High Dense Cell Design For Extremely Low RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction

9.23. Size:351K mcc
bss138a.pdf pdf_icon

9.24. Size:643K mcc
bss138.pdf pdf_icon

BSS138 Features High Dense Cell Design for Extremely Low RDS(ON) Voltage Controlled Small Signal Switch Surface Mount Package Epoxy Meets UL 94 V-0 Flammability Rating N-Channel MOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering In

9.25. Size:127K onsemi
bss138lt1.pdf pdf_icon

BSS138LT1 Preferred Device Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in http //onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel L

9.26. Size:95K onsemi
bss138lt3 bss138lt3g.pdf pdf_icon

BSS138LT1 Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in http //onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Voltage Applica

9.27. Size:263K onsemi
bss138k.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.28. Size:121K onsemi
bss138.pdf pdf_icon

October 2005 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize

9.29. Size:70K onsemi
bss138l bvss138l.pdf pdf_icon

BSS138L, BVSS138L Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in www.onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th) 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Voltage Ap

9.30. Size:155K utc
bss138.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequenc

9.31. Size:1161K jiangsu
bss138.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 3.5 @10V 50 V 220mA 1. GATE 6 @4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION Direct Logic-Level Interface TTL/CMOS High density cell design for extremely low RDS(on) Rugged and Relaible Drivers Relays

9.32. Size:1007K lge
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BSS138 SOT-23 Plastic-Encapsulate NMOSFETS ID SOT-23 V(BR)DSS RDS(on)MAX 3.5 @10V 50 V 220mA 1. GATE 6 @4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION Direct Logic-Level Interface TTL/CMOS High density cell design for extremely low RDS(on) Rugged and Relaible Drivers Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Sys

9.33. Size:811K wietron
bss138w.pdf pdf_icon

BSS138W 3 DRAIN N-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 1 Description GATE * Typical applications are dc dc converters, SOT-323(SC-70) power management in portable and battery powered 2 SOURCE products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features * Simple Drive Requirement * Small Package Outline Maximum Ratings (TA=2

9.34. Size:221K wietron
bss138.pdf pdf_icon

BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features 3 1 *Low On-Resistance 3.5 GATE 1 *Low Input Capacitance 40PF 2 *Low Out put Capacitance 12PF 2 SOURCE *Low Threshole 1 .5V *Fast Switching Speed 20ns Application * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA

9.35. Size:391K willas
bss138lt1.pdf pdf_icon

FM120-M WILLAS THRU BSS 8LT1 200 mAmps, 50 Volts Power MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optim

9.36. Size:416K willas
bss138wt1.pdf pdf_icon

FM120-M WILLAS BSS138WT1 THRU 200 mAmps, 50 Volts Power MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optim

9.37. Size:671K shenzhen
bss138.pdf pdf_icon

Shenzhen Tuofeng Semiconductor Technology Co., Ltd BSS138 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V transistors are produced using Fairchild s proprietary, RDS(ON) = 6.0 @ VGS = 4.5 V high cell density, DMOS technology. Th

9.38. Size:609K cystek
bss138c3.pdf pdf_icon

Spec. No. C834C3 Issued Date 2012.06.25 CYStech Electronics Corp. Revised Date 2014.08.20 Page No. 1/9 50V N-Channel Enhancement Mode MOSFET BVDSS 50V BSS138C3 ID 250mA RDSON@VGS=10V, ID=220mA 1.1 (typ) RDSON@VGS=4.5V, ID=220mA 1.3 (typ) RDSON@VGS=2.5V,ID=220mA 1.7 (typ) RDSON@VGS=4V,ID=100mA Features 1.3 (typ) Simple drive requirement RDSON@VGS=2.

9.39. Size:915K blue-rocket-elect
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9.40. Size:1524K blue-rocket-elect
bss139.pdf pdf_icon

BSS139 Rev.A Aug.-2017 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features SOT-23 1500V Low RDS(on),rugged and reliable, compact industry standard SOT-23 surface mount package.ESD protected up to 1500V / A

9.41. Size:1088K lrc
lbss139lt1g lbss139lt3g.pdf pdf_icon

LBSS139LT1G S-LBSS139LT1G Power MOSFET 200 mAmps, 50 Volts N Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. Low threshold voltage (VGS(th)

9.42. Size:560K lrc
lbss138wt1g s-lbss138wt1g.pdf pdf_icon

LBSS138WT1G S-LBSS138WT1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low threshold voltage (VGS(th)

9.43. Size:1057K lrc
lbss139dw1t1g lbss139dw1t3g.pdf pdf_icon

LBSS139DW1T1G S-LBSS139DW1T1G Power MOSFET 200 mAmps, 50 Volts N Channel SC-88 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low threshold voltage (VGS(t

9.44. Size:540K lrc
lbss138lt1g s-lbss138lt1g.pdf pdf_icon

LESHAN RADIO COMPANY, LTD. Power MOSFET LBSS138LT1G 200 mAmps, 50 Volts S-LBSS138LT1G N Channel SOT 23 3 Typical applications are dc dc converters, power management in portable and battery powered products such as computers, printers, 1 PCMCIA cards, cellular and cordless telephones. 2 Low Threshold Voltage (V GS(th) 0.5V...1.5V) makes it ideal for low voltage applicat

9.45. Size:1197K kexin
bss138e-3.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET BSS138E (KSS138E) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 50V ID = 300 mA (VGS = 10V) 1 2 +0.02 +0.1 RDS(ON) 2.5 (VGS = 10V) 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 3.5 (VGS =2.5V) Low On-Resistance ESD Rating 1.5KV HBM 1. Gate 2. Source 3. Drain Absolute M

9.46. Size:1105K kexin
bss138-3.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET BSS138 (KSS138) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 50V ID = 200 mA (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 3.5 (VGS = 10V) 0.95 -0.1 +0.1 1.9 -0.2 Fast Switching Speed Low On-Resistance 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Sym

9.47. Size:802K kexin
bss138.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET BSS138 (KSS138) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 50V ID = 200 mA (VGS = 10V) 1 2 RDS(ON) 3.5 (VGS = 10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 Fast Switching Speed 1.9-0.1 Low On-Resistance 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol R

9.48. Size:234K kexin
bss138 kss138.pdf pdf_icon

N-Channel MOSFET BSS138 (KSS138) 3 D 12 G S

9.49. Size:1172K kexin
bss138e.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET BSS138E (KSS138E) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 50V ID = 300 mA (VGS = 10V) 1 2 RDS(ON) 2.5 (VGS = 10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 RDS(ON) 3.5 (VGS =2.5V) 1.9-0.1 Low On-Resistance ESD Rating 1.5KV HBM 1. Gate 2. Source 3. Drain Absolute Maximum

9.50. Size:237K panjit
bss138.pdf pdf_icon

BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 0.120(3.04) RDS(ON), VGS@2.5V,IDS@100mA=6 0.110(2.80) Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition 0.056(1.40) 0.047(1.20) Specially Des

9.51. Size:130K comchip
bss138-g.pdf pdf_icon

MOSFET BSS138-G N-Channel 50-V(D-S) MOSFET RoHS Device Features 1 Gate SOT-23 -High density cell design for extremely low RDS(ON). 2 Source 3 Drain -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 2 -Case SOT-23, molded plastic. 0.079(2.00) 0.071(1.80) -Terminals solderable per MIL-STD-750, 0.006(0.15) method 2026. 0.

9.52. Size:432K globaltech semi
gsmbss138.pdf pdf_icon

GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement 50V/0.2A , RDS(ON)=3.5 @VGS=5V mode field effect transistors are produced using 50V/0.2A , RDS(ON)=10 @VGS=2.75V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to min

9.53. Size:551K mei
bss138lt1g.pdf pdf_icon

Lead Free RoHS Compliant MEI BSS138LT1G N Channel SOT 23 3 Typical applications are dc dc converters, power management in portable and battery powered products such as computers, printers, 1 PCMCIA cards, cellular and cordless telephones. 2 Low Threshold Voltage (V GS(th) 0.5V...1.5V) makes it ideal for low voltage applications SOT 23 (TO 236AB) Miniatu

9.54. Size:478K slkor
bss138.pdf pdf_icon

BSS138 N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 50 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR 220 mA Drain Current (pulsed) IDRM 880 m

9.55. Size:1401K umw-ic
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R UMWType UMW BSS138 UMW BSS138 UMW BSS138 SMD N-Channel MOSFET Features VDS (V) = 50V SOT 23 ID = 300 mA (VGS = 10V) RDS(ON) 2.5 (VGS = 10V) RDS(ON) 3.5 (VGS =2.5V) Low On-Resistance ESD Rating 1.5KV HBM 1. GATE MARKING 2. SOURCE 3. DRAIN S S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source V

9.56. Size:1761K anbon
bss138.pdf pdf_icon

BSS138 N-Channel 50V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING SS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-So

9.57. Size:720K huashuo
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BSS138 N-Ch 50V Fast Switching MOSFETs Description Product Summary VDS 50 V The BSS138 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 3.4 gate charge for most of the synchronous buck converter applications. ID 230 mA The BSS138 meet the RoHS and Green Product requirement with full function reliability approved. Green

9.58. Size:904K cn shikues
bss138.pdf pdf_icon

9.59. Size:453K cn zre
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BSS138 MOSFET(N-Channel) V(BR)DSS RDS(ON)MAX ID SOT-23 3.5 @10V 50V 0.22A SOT-23 Plastic-Encapsulate MOSFET 6 @4.5V SOT-23 Features TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter. Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package. UL Epoxy

9.60. Size:2898K cn alj
bss138.pdf pdf_icon

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate Mosfets BSS138 N-Channel Mosfet Features High density cell design for extremely low R DS(on) Rugged and Reliable Application 1. Gate Direct Logic-Level Interface TTL/CMOS Drivers Relays, Solenoids, Lamps, Hammers, Display, Memories, 2. Source Transistors, etc. 3. Drain Battery Oper

9.61. Size:2850K cn tuofeng
bss138.pdf pdf_icon

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 30-V(D-S) MOSFET BSS138 V(BR)DSS RDS(on)MAX ID SOT-23 3.5 @ 10V 3 50V 0.22A 1.GATE 6.0 @ 4.5V 2.SOURCE 3.DRAIN 1 2 Features 1) Low on-resistance. 2) Fast sw itching speed. MARKING Equivalent Circuit 3) Drive circuits can be simple. 4) Parallel use is easy. 5) ESD

9.62. Size:1243K winsok
wstbss138.pdf pdf_icon

WSTBSS138 N-Ch MOSFET General Description Product Summery The WSTBSS138 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate 110m 60V 2.1A charge for most of the synchronous buck converter applications . Applications The WSTBSS138 meet the RoHS and Green Product requirement , 100% EAS guara

9.63. Size:1614K cn vbsemi
bss138k.pdf pdf_icon

BSS138K www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G 1

9.64. Size:888K cn vbsemi
bss138w.pdf pdf_icon

BSS138W www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2 at VGS = 10 V 60 300 Low On-Resistance 2 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns SOT-323 Low Input and Output Leakage SC-70 (3-LEADS) TrenchFET P

9.65. Size:1581K cn vbsemi
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LBSS139LT1G www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G

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BSS138 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G 1

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BSS138DW www.VBsemi.tw Dual N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ( )ID (mA) Halogen-free According to IEC 61249-2-21 Definition 2.5 at VGS = 10 V 60 300 Low On-Resistance 2.5 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns SOT-363 Low Input and Output Leakage SC-70 TrenchFET

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RoHS COMPLIANT BSS138W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /

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RoHS COMPLIANT BSS138 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / O

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RoHS COMPLIANT BSS138DW N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 340mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input /

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SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET SOT-23 FEATURE Low On-Resistance Low Gate Threshold Voltage 1. GATE Fast Switching Speed 2. SOURCE 3. DRAI Low Input / Output Leakage Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 50 V Continuous Gate-Source Voltage VGSS 12 Continuous D

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