BSS138LT3G Todos los transistores

 

BSS138LT3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS138LT3G
   Código: J1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 0.225 W
   Voltaje máximo drenador - fuente |Vds|: 50 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 0.2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
   Conductancia de drenaje-sustrato (Cd): 12 pF
   Resistencia entre drenaje y fuente RDS(on): 3.5 Ohm
   Paquete / Cubierta: SOT-23 SOT-346

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BSS138LT3G Datasheet (PDF)

 ..1. Size:95K  onsemi
bss138lt3 bss138lt3g.pdf

BSS138LT3G BSS138LT3G

BSS138LT1Power MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelLow Voltage Applica

 6.1. Size:127K  onsemi
bss138lt1.pdf

BSS138LT3G BSS138LT3G

BSS138LT1Preferred DevicePower MOSFET200 mA, 50 VN-Channel SOT-23Typical applications are DC-DC converters, power management inhttp://onsemi.comportable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones.200 mA, 50 VFeaturesRDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal forN-ChannelL

 6.2. Size:391K  willas
bss138lt1.pdf

BSS138LT3G BSS138LT3G

FM120-M WILLASTHRUBSS 8LT1200 mAmps, 50 VoltsPower MOSFETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim

 6.3. Size:540K  lrc
lbss138lt1g s-lbss138lt1g.pdf

BSS138LT3G BSS138LT3G

LESHAN RADIO COMPANY, LTD.Power MOSFETLBSS138LT1G200 mAmps, 50 Volts S-LBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicat

 6.4. Size:551K  mei
bss138lt1g.pdf

BSS138LT3G BSS138LT3G

Lead FreeRoHS CompliantMEIBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicationsSOT 23 (TO236AB) Miniatu

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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