BSZ014NE2LS5IF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ014NE2LS5IFData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ014NE2LS5IFTSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for synchronous rectification Monolithic integrated Schottky like diode Ve

n-Channel Power MOSFETOptiMOSBSZ019N03LS Data Sheet2.1, 2011-09-21Final Industrial & MultimarketOptiMOS Power-MOSFETBSZ019N03LS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

BSZ011NE2LS5IMOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resistance R @ V =4.5VDS(on) GS 100% avalanche tested N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Pr

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ013NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ013NE2LS5ITSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode

BSZ018NE2LSFor OptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 1.8 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 2.4 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 Very low on-resistance R @ V =4.5 V

BSZ010NE2LS5MOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for OR-ing application Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qual

BSZ018NE2LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.8 mW Monolithic integrated Schottky like diodeA ID 40 Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 23 nC 100% avalanche tested36 nC QG(0V..10V) N-channelPG-TSDSON-8 (fused leads) Qualified according to

BSZ018N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous rectification Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 175 C ratedProduct validatio

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ017NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ017NE2LS5ITSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode