BSZ018NE2LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSZ018NE2LS
   Código: 018NE2L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 18.6 nC
   trⓘ - Tiempo de subida: 4.4 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: SUPERSO8

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BSZ018NE2LS Datasheet (PDF)

..1. Size:669K infineon
bsz018ne2ls.pdf

BSZ018NE2LSFor OptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 1.8 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 2.4 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 Very low on-resistance R @ V =4.5 V

0.1. Size:625K infineon
bsz018ne2lsi.pdf

BSZ018NE2LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.8 mW Monolithic integrated Schottky like diodeA ID 40 Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 23 nC 100% avalanche tested36 nC QG(0V..10V) N-channelPG-TSDSON-8 (fused leads) Qualified according to

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bsz018n04ls6.pdf

BSZ018N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous rectification Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 175 C ratedProduct validatio

9.1. Size:1404K infineon
bsz019n03ls.pdf

n-Channel Power MOSFETOptiMOSBSZ019N03LS Data Sheet2.1, 2011-09-21Final Industrial & MultimarketOptiMOS Power-MOSFETBSZ019N03LS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

9.2. Size:1216K infineon
bsz011ne2ls5i.pdf

BSZ011NE2LS5IMOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resistance R @ V =4.5VDS(on) GS 100% avalanche tested N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Pr

9.3. Size:1646K infineon
bsz013ne2ls5i.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ013NE2LS5IData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ013NE2LS5ITSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode

9.4. Size:1609K infineon
bsz014ne2ls5if.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ014NE2LS5IFData SheetRev. 2.1FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ014NE2LS5IFTSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for synchronous rectification Monolithic integrated Schottky like diode Ve

9.5. Size:1215K infineon
bsz010ne2ls5.pdf

BSZ010NE2LS5MOSFETTSDSON-8 FLOptiMOSTM5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for OR-ing application Very low on-resistance R @ V =4.5 VDS(on) GS 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qual

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bsz017ne2ls5i.pdf

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