BSZ028N04LS Todos los transistores

 

BSZ028N04LS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSZ028N04LS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 640 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm

Encapsulados: TSDSON-8FL

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BSZ028N04LS datasheet

 ..1. Size:709K  infineon
bsz028n04ls.pdf pdf_icon

BSZ028N04LS

BSZ028N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.8 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 40 A 100% avalanche tested QOSS 28 nC Superior thermal resistance QG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applications PG-TSDSON-

 9.1. Size:1519K  infineon
bsz024n04ls6.pdf pdf_icon

BSZ028N04LS

BSZ024N04LS6 MOSFET TSDSON-8 FL OptiMOSTM 6 Power-Transistor, 40 V (enlarged source interconnection) Features Optimized for synchronous application Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord

 9.2. Size:1401K  infineon
bsz025n04ls.pdf pdf_icon

BSZ028N04LS

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 40 V BSZ025N04LS Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 40 V BSZ025N04LS TSDSON-8 FL 1 Description (enlarged source interconnection) Features Optimized for synchronous rectification Very low on-resistance R DS(on) 100% avalanche test

 9.3. Size:1521K  infineon
bsz021n04ls6.pdf pdf_icon

BSZ028N04LS

BSZ021N04LS6 MOSFET TSDSON-8 FL OptiMOSTM6 Power-Transistor, 40 V (enlarged source interconnection) Features Optimized for synchronous application Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accordi

Otros transistores... BSS84-7 , BSS84AKMB , BSS84TA , BSS84TC , BST72A , BSZ014NE2LS5IF , BSZ018NE2LS , BSZ025N04LS , AON6414A , BSZ034N04LS , BSZ035N03LS , BSZ035N03MS , BSZ036NE2LS , BSZ042N06NS , BSZ0501NSI , BSZ0506NS , BSZ050N03LS .

History: AP70SL500AH | BUK129-50DL | BSZ014NE2LS5IF | LSH70R1KGT | WM03P51A

 

 

 

 

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