BSZ042N06NS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSZ042N06NS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 490 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: TSDSON-8FL
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BSZ042N06NS Datasheet (PDF)
bsz042n06ns.pdf
TypeBSZ042N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 4.2 mW Superior thermal resistanceID 40 A N-channelQOSS nC 32 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 27 Pb-free lead plating; RoHS compliantTSDSON
bsz042n04nsg.pdf
BSZ042N04NS GProduct Summary 3 Power-TransistorV 40 VDSFeaturesR 4.2mWDS(on),max Fast switching MOSFET for SMPSI 40 AD Optimized technology for DC/DC convertersPG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsz040n04lsg.pdf
BSZ040N04LS GOptiMOS3 Power-TransistorProduct SummaryFeatures V 40 VDS Fast switching MOSFET for SMPS R 4.0mDS(on),max Optimized technology for DC/DC converters I 40 ADPG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
bsz040n06ls5.pdf
BSZ040N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Tab
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918