BSZ042N06NS Todos los transistores

 ..1. Size:447K  infineon
 bsz042n06ns.pdf

Type BSZ042N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 4.2 mW Superior thermal resistance ID 40 A N-channel QOSS nC 32 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant TSDSON

 6.1. Size:475K  infineon
 bsz042n04nsg.pdf

BSZ042N04NS G Product Summary 3 Power-Transistor V 40 V DS Features R 4.2 mW DS(on),max Fast switching MOSFET for SMPS I 40 A D Optimized technology for DC/DC converters PG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super

 9.1. Size:326K  infineon
 bsz040n04lsg.pdf

BSZ040N04LS G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 4.0 m DS(on),max Optimized technology for DC/DC converters I 40 A D PG-TSDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S

 9.2. Size:1457K  infineon
 bsz040n06ls5.pdf

BSZ040N06LS5 MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor, 60 V (enlarged source interconnection) Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Tab