BSZ0501NSI Todos los transistores

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSZ0501NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSZ0501NSI TSDSON-8 FL 1 Description (enlarged source interconnection) Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Ver

BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSZ0500NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSZ0500NSI TSDSON-8 FL 1 Description (enlarged source interconnection) Features Optimized for high performance buck converters Monolithic integrated Schottky-like diode Ver

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSZ0506NS Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSZ0506NS TSDSON-8 FL 1 Description (enlarged source interconnection) Features Optimized for high performance buck converters (Server,VGA) Very low FOM for high frequency SMPS Q

BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product

BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio