BSZ0501NSI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSZ0501NSI
Código: 0501NSI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 VQgⓘ - Carga de la puerta: 11.4 nC
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 540 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Paquete / Cubierta: TSDSON-8FL
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BSZ0501NSI Datasheet (PDF)
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BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product
bsz050n03ls.pdf
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