BSZ0907ND MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSZ0907ND
   Código: 0907ND
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 7.6 nC
   trⓘ - Tiempo de subida: 3.2 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm
   Paquete / Cubierta: PG-WISON-8

Búsqueda de reemplazo de MOSFET BSZ0907ND

BSZ0907ND Datasheet (PDF)

..1. Size:714K infineon
bsz0907nd.pdf

BSZ0907NDDual N-Channel OptiMOS MOSFETProduct Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Enhancement modeRDS(on),max VGS=10 V 9.5 7.2 mW Logic level (4.5V rated)VGS=4.5 V 13 10 Avalanche ratedID 25 30 A 100% Lead-free; RoHS compliantPG-WISON-8 Halogen-free according to IEC61249-2-21Type Package Marking Lead Free BSZ

8.1. Size:1453K infineon
bsz0909ns rev3.2.pdf

n-Channel Power MOSFETOptiMOSBSZ0909NS Data Sheet3.2, 2011-09-22Final Industrial & MultimarketOptiMOS Power-MOSFETBSZ0909NS1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

8.2. Size:681K infineon
bsz0901ns.pdf

For BSZ0901NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 2.0 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 2.6 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 (fused leads) Very low on-resistance R @

8.3. Size:617K infineon
bsz0901nsi.pdf

BSZ0901NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.1 mW Integrated monolithic Schottky-like diodeID 40 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 28 nC 100% avalanche testedQG(0V..10V) 41 nC Superior thermal resistancePG-TSDSON-8 (fused leads) N-cha

8.4. Size:676K infineon
bsz0908nd.pdf

BSZ0908NDPowerStage 3x3Product Summary FeaturesQ1 Q2 Dual N-channel OptiMOS MOSFETVDS 30 30 V Enhancement modeRDS(on),max VGS=10 V 18 9 mW Logic level (4.5V rated)VGS=4.5 V 25 13 Avalanche ratedID 19 30 A 100% Lead-free; RoHS compliantPG-WISON-8 Halogen-free according to IEC61249-2-21Type Package Marking Lead Free BSZ0908ND PG-WISON-8 090

8.5. Size:634K infineon
bsz0904nsi.pdf

BSZ0904NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 4.0 mW Integrated monolithic Schottky-like diodeID 40 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 12 nC 100% avalanche testedQG(0V..10V) 17 nC Superior thermal resistancePG-TSDSON-8 (fused leads) N-cha

8.6. Size:1556K infineon
bsz0909nd.pdf

BSZ0909NDMOSFETPowerStage 3x3PowerStage 3x3Features Dual N-channel OptiMOS MOSFET Enhancement mode Logic level (4.5V rated) Avalanche rated 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21Table 1 Key Performance ParametersParameter Value UnitV 30 VDSR 18 mDS(on),maxI 20 ADQ 2.3 nCOSSQ (0V..4.5V) 1.8 nCGType /

8.7. Size:666K infineon
bsz0902ns.pdf

BSZ0902NSFor OptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 2.6 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 3.5 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on)PG-TSDSON-8 (fused leads) Very low on-resistance R

8.8. Size:588K infineon
bsz0902nsi.pdf

BSZ0902NSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diodeID 40 A Very low on-resistance R @ V =4.5 VDS(on) GSQOSS 17 nC 100% avalanche testedQG(0V..10V) 24 nC Superior thermal resistancePG-TSDSON-8 (fused leads) N-cha

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