10N12 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel Mosfet Transistor 10N12FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage- : V = 120V(Min)DSSStatic Drain-Source On-Resistance : R = 0.3(Max)DS(on)SOA is Power-Dissipation LimitedNanosecond Switching SpeedsHigh Input ImpedanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIOND

IGBTSGH10N120RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10s @ TC = 100C, VGE = 15V(IGBTs) provide low conduction and switching losses as High speed switchingwell as short circuit ruggedness. The RUF series is Low saturation voltage : VCE(sat) = 2.3 V @ IC = 10Adesigned fo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MHPM6B10N120/DHybrid Power ModuleMHPM6B10N120Integrated Power StageMHPM6B15N120for 460 VAC Motor DrivesMHPM6B25N120These modules integrate a 3phase inverter in a singleSERIESconvenient package. They are designed for 2.0, 3.0, and 5.0 hpmotor drive applications. The inverter incorporates advancedMotorola Pre

SCT10N120DatasheetSilicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., TJ = 150 C) in an HiP247 packageFeatures Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 C) Very fast and robust intrinsic body diode Low capacitance321ApplicationsHiP247 Solar inverters, UPSD(2, TA

September 2000 IGBTSGH10N120RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10s @ TC = 100C, VGE = 15Vseries provides low conduction and switching losses as well High Speed Switchingas short circuit ruggedness. RUFD series is designed for Low Saturation Voltage : VCE(sat) = 2.3 V

HGTG10N120BNDData Sheet December 200135A, 1200V, NPT Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 35A, 1200V, TC = 25oCThe HGTG10N120BND is a Non-Punch Through (NPT) 1200V Switching SOA CapabilityIGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvoltage switching IGBT famil

HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvo

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 120VOptiMOS 3 Power-TransistorIPD_S110N12N3 GData SheetRev. 2.4FinalIndustrial & MultimarketIPD110N12N3 G IPS110N12N3 GOptiMOSTM3Power-TransistorProduct SummaryFeaturesVDS 120 V N-channel, normal levelRDS(on),max11m Excellent gate charge x R product (FOM)DS(on)

IXSH10N120AU1PRELIMINARY DATA SHEETIC25 = 20 AIGBT with DiodeVCES = 1200 V"S" Series - Improved SCSOA CapabilityVCE(sat) = 4.0 VCSymbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VEVGES Continuous 20 VVGEM Transient 30 VTO-247ADIC25 TC = 25C 20 AIC90 TC = 90C 10 AICM TC = 25C, 1 ms 40

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

N N-CHANNEL IGBT R TT010N120EI MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

N N-CHANNEL IGBT R TT010N120EQ MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

NCEP10N12KNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =8.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

NCEP10N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

Datasheet 10m, 100V, N-Channel Power MOSFET SRT10N120L General Description Symbol The Sanrise SRT10N120L uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4time. This device is ideal for high frequency switching and synchronous rectification. The SRT10N120L break down voltage is 100V Source

HGD210N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level20RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness42 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rect

HGN210N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level20RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability25RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness37 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rect

HGS210N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level20.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability25.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

HGM210N12SLP-1120V N-Ch Power MOSFETFeature 120 VVDS High Speed Power Switching, Logic Level 20RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 29 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited)Application Synchronou

SPT10N120T1T8TL1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

RoHS DGW10N120CTL COMPLIANT IGBT Modules V 1200 V CEI 10 A CV I =10A 1.85 V CE(SAT) C Applications Circuit Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Features Low V Trench-FS IGBT technology CE(sat) Maximum junction temperature 175 Positive temperature coefficient Including fast & sof

SPT10N120T11200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

YGW10N120T3 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A Cimproved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature sta

isc N-Channel MOSFET Transistor IPS110N12N3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3FEATURESStatic drain-source on-resistance:RDS(on)11mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE