10N12 Todos los transistores

 ..1. Size:259K  inchange semiconductor
 10n12.pdf

isc N-Channel Mosfet Transistor 10N12 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 120V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) SOA is Power-Dissipation Limited Nanosecond Switching Speeds High Input Impedance Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION D

 0.1. Size:488K  1
 sgh10n120ruf.pdf

IGBT SGH10N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) provide low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.3 V @ IC = 10A designed fo

 0.2. Size:265K  motorola
 mhpm6b10n120rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MHPM6B10N120/D Hybrid Power Module MHPM6B10N120 Integrated Power Stage MHPM6B15N120 for 460 VAC Motor Drives MHPM6B25N120 These modules integrate a 3 phase inverter in a single SERIES convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced Motorola Pre

 0.3. Size:232K  st
 sct10n120.pdf

SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 12 A, 520 m (typ., TJ = 150 C) in an HiP247 package Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 C) Very fast and robust intrinsic body diode Low capacitance 3 2 1 Applications HiP247 Solar inverters, UPS D(2, TA

 0.4. Size:548K  fairchild semi
 sgh10n120rufd.pdf

September 2000 IGBT SGH10N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V

 0.5. Size:106K  fairchild semi
 hgtg10n120bnd.pdf

HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 35A, 1200V, TC = 25oC The HGTG10N120BND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT famil

 0.6. Size:196K  fairchild semi
 hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC vo

 0.7. Size:84K  njs
 rfm10n12 rfm10n15 rfp10n12 rfp10n15.pdf

 0.8. Size:587K  infineon
 ipds110n12n3g ips110n12n3g ips110n12n3 ipd110n12n3.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 120V OptiMOS 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2.4 Final Industrial & Multimarket IPD110N12N3 G IPS110N12N3 G OptiMOSTM3Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on),max 11 m Excellent gate charge x R product (FOM) DS(on)

 0.9. Size:41K  ixys
 ixsh10n120au1.pdf

IXSH10N120AU1 PRELIMINARY DATA SHEET IC25 = 20 A IGBT with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 4.0 V C Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V E VGES Continuous 20 V VGEM Transient 30 V TO-247AD IC25 TC = 25 C 20 A IC90 TC = 90 C 10 A ICM TC = 25 C, 1 ms 40

 0.10. Size:128K  ixys
 ixsh10n120a.pdf

 0.11. Size:296K  onsemi
 hgtg10n120bn hgtp10n120bn hgt1s10n120bns.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.12. Size:341K  taiwansemi
 tsg10n120cn.pdf

TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 30 10.5 General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

 0.13. Size:550K  jilin sino
 tt010n120ei.pdf

 0.14. Size:1472K  jilin sino
 tt010n120eq.pdf

 0.15. Size:764K  blue-rocket-elect
 brg10n120d.pdf

BRG10N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Lo

 0.16. Size:417K  ncepower
 ncep10n12 ncep10n12d.pdf

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 0.17. Size:729K  ncepower
 ncep10n12ak.pdf

NCEP10N12AK NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =9m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination

 0.18. Size:937K  ncepower
 ncep10n12k.pdf

NCEP10N12K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =8.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination

 0.19. Size:409K  ncepower
 ncep10n12g.pdf

NCEP10N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio

 0.20. Size:417K  ncepower
 ncep10n12.pdf

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 0.21. Size:417K  ncepower
 ncep10n12d.pdf

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

 0.22. Size:919K  oriental semi
 sfg110n12pf.pdf

 0.23. Size:783K  oriental semi
 sfg110n12if.pdf

 0.24. Size:813K  oriental semi
 sfg110n12ff.pdf

 0.25. Size:788K  oriental semi
 sfg110n12kf.pdf

 0.26. Size:1049K  sanrise-tech
 srt10n120l.pdf

Datasheet 10m , 100V, N-Channel Power MOSFET SRT10N120L General Description Symbol The Sanrise SRT10N120L uses advanced split Drain 5,6,7,8 gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4 time. This device is ideal for high frequency switching and synchronous rectification. The SRT10N120L break down voltage is 100V Source

 0.27. Size:902K  cn hunteck
 hgd210n12sl.pdf

HGD210N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 20 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rect

 0.28. Size:896K  cn hunteck
 hgn210n12sl.pdf

HGN210N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 20 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 37 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rect

 0.29. Size:907K  cn hunteck
 hgs210n12sl.pdf

HGS210N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 20.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 8 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS

 0.30. Size:1144K  cn hunteck
 hgm210n12sl.pdf

HGM210N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 20 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 25 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 29 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 26 A Lead Free, Halogen Free ID (Package Limited) Application Synchronou

 0.31. Size:5219K  cn sps
 spt10n120t1t8tl.pdf

SPT10N120T1T8TL 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A C improved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

 0.32. Size:394K  cn yangzhou yangjie elec
 dgw10n120ctl.pdf

RoHS DGW10N120CTL COMPLIANT IGBT Modules V 1200 V CE I 10 A C V I =10A 1.85 V CE(SAT) C Applications Circuit Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Features Low V Trench-FS IGBT technology CE(sat) Maximum junction temperature 175 Positive temperature coefficient Including fast & sof

 0.33. Size:1546K  cn sptech
 spt10n120t1.pdf

SPT10N120T1 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A C improved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

 0.34. Size:444K  cn luxin semi
 ygw10n120t3.pdf

YGW10N120T3 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A C improved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature sta

 0.35. Size:261K  inchange semiconductor
 ips110n12n3.pdf

isc N-Channel MOSFET Transistor IPS110N12N3 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 0.36. Size:242K  inchange semiconductor
 ipd110n12n3.pdf

isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 FEATURES Static drain-source on-resistance RDS(on) 11m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE