12N20 Todos los transistores

 ..1. Size:247K  inchange semiconductor
 12n20.pdf

isc N-Channel MOSFET Transistor 12N20 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.25 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 0.1. Size:177K  1
 irf630 irf631 irf632 irf633 irf230 irf231 irf232 irf233 mtp12n18 mtp12n20.pdf

 0.2. Size:306K  st
 stv12n20.pdf

 0.3. Size:801K  fairchild semi
 fqd12n20tf fqd12n20tm fqd12n20 fqu12n20 fqu12n20tu.pdf

January 2009 QFET FQD12N20 / FQU12N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18 nC) planar stripe, DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia

 0.4. Size:640K  fairchild semi
 fqd12n20ltm f085.pdf

June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especiall

 0.5. Size:699K  fairchild semi
 fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf

January 2009 QFET FQD12N20L / FQU12N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been

 0.6. Size:81K  njs
 mtp12n20.pdf

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 rfm12n18 rfm12n20 rfp12n18 rfp12n20.pdf

 0.8. Size:265K  diodes
 zxt12n20dx.pdf

ZXT12N20DX SuperSOT4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 40m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSO

 0.9. Size:1315K  onsemi
 fqd12n20l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.10. Size:905K  cn vbsemi
 fqd12n20.pdf

FQD12N20 www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING

 0.11. Size:571K  cn hmsemi
 hm12n20d.pdf

HM N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =200V,ID = A RDS(ON)