15N05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 15N05
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 50 V
Voltaje máximo fuente - puerta |Vgs|: 15 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Tiempo de subida (tr): 260 nS
Conductancia de drenaje-sustrato (Cd): 450 pF
Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
Paquete / Cubierta: TO-220
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15N05 Datasheet (PDF)
15n05.pdf
isc N-Channel MOSFET Transistor 15N05FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch regulatorsSwitching converters motor drivers and relay drivers
stp15n05.pdf
STP15N05LSTP15N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP15N05L 50 V
stp15n05l.pdf
STP15N05LSTP15N05LFIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP15N05L 50 V
rfp15n05l.pdf
RFP15N05LData Sheet January 200415A, 50V, 0.140 Ohm, Logic Level N- FeaturesChannel Power MOSFETs 15A, 50V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.140power field effect transistors designed for applications such Design Optimized for 5V Gate Drivesas switching regulators, switching converters, motor drivers, relay drivers and drivers for hi
rfp15n05l rfp15n06l.pdf
RFP15N05L, RFP15N06LData Sheet July 1999 File Number 1558.315A, 50V and 60V, 0.140 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 15A, 50V and 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.140power field effect transistors designed for applications such Design Optimized for 5V Gate Drivesas switching regulators, switching converters, motor driv
mm15n050p.pdf
MM15N050P 500V 15A N-Channel MOSFET March 2011 PRELIMINARY RoHS Compliant FEATURES Low drain-source ON resistance High forward transfer admittance Repetitive avalanche ratings Simple drive requirements Ease of paralleling APPLICATIONS 1.GATE Switching power supplies 2.DRAIN Motor controls 3.SOURCE Inverters and choppers Audio a
srt15n050h.pdf
Datasheet5.0m, 150V, N-Channel Power MOSFET SRT15N050HGeneral Description SymbolThe Sanrise SRT15N050H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
srt15n059h.pdf
Datasheet5.9m, 150V, N-Channel Power MOSFET SRT15N059HGeneral Description SymbolThe Sanrise SRT15N059H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou
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