15N12 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 15N12
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 150 nS
Cossⓘ - Capacitancia de salida: 750 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Búsqueda de reemplazo de 15N12 MOSFET
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15N12 datasheet
15n12.pdf
isc N-Channel MOSFET Transistor 15N12 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Switching converters,motor drivers,relay drivers.
ihw15n120r2 h15r1202.pdf
IHW15N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1200 V applications offers G E - very tight parameter distribution - high ruggedness, temperature stable behavior Low EMI
sgh15n120ruf.pdf
IGBT SGH15N120RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10 s @ TC = 100 C, VGE = 15V (IGBTs) provide low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.3 V @ IC = 15A designed fo
ihw15n120e1.pdf
Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW15N120E1 Data sheet Industrial Power Control IHW15N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic
irg8p15n120kd.pdf
IRG8P15N120KDPbF IRG8P15N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 15A, TC =100 C E tSC 10 s, TJ(max) = 150 C E G C G G C E VCE(ON) typ. = 1.7V @ IC = 10A IRG8P15N120KDPbF IRG8P15N120KD EPbF n-channel TO 247AC Applications TO 247AD G C E Industrial Motor Drive Gate Collector E
fga15n120ftd.pdf
January 2008 FGA15N120FTD tm 1200V, 15A Field Stop Trench IGBT Features Field stop trench technology General Description High speed switching Using advanced field stop trench technology, Fairchild s 1200V Low saturation voltage VCE(sat) =1.58V @ IC = 15A trench IGBTs offer superior conduction and switching perfor- High input impedance mances, and easy parallel o
fga15n120antdtu f109.pdf
May 2006 FGA15N120ANTD / FGA15N120ANTD_F109 tm 1200V NPT Trench IGBT Features Description NPT Trench Technology, Positive temperature coefficient Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction Low saturation voltage VCE(sat), typ = 1.9V and switching performances, high avalanche ruggedness and @ IC = 1
sgh15n120rufd.pdf
September 2000 IGBT SGH15N120RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUFD Short Circuit Rated 10 s @ TC = 100 C, VGE = 15V series provides low conduction and switching losses as well High Speed Switching as short circuit ruggedness. RUFD series is designed for Low Saturation Voltage VCE(sat) = 2.3 V
sgp15n120 sgw15n120.pdf
SGP15N120 SGW15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-
ikw15n120h3 rev1 2g.pdf
IKW15N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TRENCHSTOPTM technology offering very low V CEsat G E low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175 C qualified according to JEDEC for target app
ikw15n120bh6.pdf
IKW15N120BH6 Sixth generation, high speed soft switching series High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode C Features 1200V TRENCHSTOPTM IGBT6 technology offering High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperature coeffi
sgb15n120.pdf
SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D -PAK) - parallel switching capability Pb-f
sgp15n120 sgw15n120 rev2.pdf
SGP15N120 SGW15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-
skw15n120.pdf
SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G - Motor controls E - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - parallel
ikw15n120t2 rev2 1.pdf
IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel EmCon diode C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very tight parameter d
ihy15n120r3.pdf
IHY15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only G E TrenchStop technology offering - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive te
ihw15n120r3.pdf
IHW15N120R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applications offers - very tight parameter distribution G - high ruggedness, temperature stable behavior E - low V CEsat - easy parallel switching capability
ig15n120h3 1 1 final.pdf
IGW15N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM 1200V technology offering very low V CEsat G E low EMI maximum junction temperature 175 C qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant complete product spectrum and PSpice Mode
sgp15n120 sgw15n120 rev2 6.pdf
SGP15N120 SGW15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-
sgp15n120.pdf
SGP15N120 SGW15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-
ihw15n120e1.pdf
Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body Diode for soft-switching IHW15N120E1 Data sheet Industrial Power Control IHW15N120E1 Resonant Soft-Switching Series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TRENCHSTOPTM technology applic
sgw15n120.pdf
SGP15N120 SGW15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-220-3-1 - parallel switching capability PG-TO-
igw15n120h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW15N120H3 1200V high speed switching series third generation Data sheet Industrial Power Control IGW15N120H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low turn-off energy low V CEsat low EMI maximum junc
ikw15n120t2.pdf
IKW15N120T2 TrenchStop 2nd generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop technology with soft, fast recovery anti-parallel Emitter Controlled Diode C Short circuit withstand time 10 s Designed for - Frequency Converters G E - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very t
ikw15n120h3.pdf
IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW15N120H3 1200V high speed switching series third generation Data sheet Industrial Power Control IKW15N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features
ihw15n120r3 2 2.pdf
IH-series Reverse conducting IGBT with monolithic body diode IHW15N120R3 Data sheet Industrial & Multimarket IHW15N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features Powerful monolithic body diode with low forward voltage designed for soft commutation only TrenchStopTM technology applications offers - very tight parameter distribution G -
sgb15n120 .pdf
SGB15N120 Fast IGBT in NPT-technology C 40% lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G E - Motor controls - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 (D -PAK) - parallel switching capability Pb-f
skw15n120 .pdf
SKW15N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C Lower Eoff compared to previous generation Short circuit withstand time 10 s Designed for G - Motor controls E - Inverter - SMPS NPT-Technology offers - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-247-3 - parallel
ixra15n120.pdf
Advanced Technical Information IXRA 15N120 VCES = 1200 V IGBT with Reverse IC25 = 25 A Blocking capability VCE(sat) typ. = 2.5 V 2 TO-263AB 1 TAB 3 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT IGBT with NPT (non punch through) Symbol Conditions Maximum Ratings structure VCES TVJ = 25 C to 150 C 1200 V reverse blocking capability VGES Conti
ixgp15n120b.pdf
IXGA 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGP 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA
ixgh15n120b2d1.pdf
Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V (IXGH) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G TAB C
ixgt15n120bd1.pdf
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2
ixgp15n120b2.pdf
VCES =1200 V IXGA 15N120B2 HiPerFASTTM IGBT IC25 = 30 A IXGP 15N120B2 VCE(sat) = 3.5 V Optimized for 10-25 KHz hard tfi(typ) = 137 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 2
ixsa15n120b.pdf
Advance Technical Information IXSA 15N120B VCES =1200 V HIGH Voltage IGBT IXSP 15N120B IC25 = 30 A VCE(sat) = 3.4 V "S" Series - Improved SCSOA Capability TO-220AB (IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C30 A TO-263 AA (
ixsh15n120b ixst15n120b.pdf
IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2
ixgt15n120b2d1.pdf
Advance Technical Information VCES =1200 V IXGH15N120B2D1 HiPerFASTTM IGBT IC25 = 30 A IXGT15N120B2D1 VCE(sat) = 3.3 V Optimized for 10-20 KHz hard tfi(typ) = 137 ns switching and up to 100 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V (IXGH) VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V G TAB C
ixsp15n120b.pdf
Advance Technical Information IXSA 15N120B VCES =1200 V HIGH Voltage IGBT IXSP 15N120B IC25 = 30 A VCE(sat) = 3.4 V "S" Series - Improved SCSOA Capability TO-220AB (IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C30 A TO-263 AA (
ixsh15n120b.pdf
IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2
ixsh15n120bd1.pdf
IXSH 15N120BD1 HIGH Voltage IGBT IC25 = 30 A IXST 15N120BD1 with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C30 A TO-268 (
ixgh15n120c.pdf
IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V E VGEM Transient 30 V (TAB) IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-247 AD (IXGH) ICM TC =
ixgt15n120cd1.pdf
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2
ixsh15n120au1.pdf
IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode IC25 = 30 A "S" Series - Improved SCSOA Capability VCES = 1200 V C VCE(sat) = 4.0 V G E Symbol Test Conditions Maximum Ratings TO-247AD VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C VGES Continuous 20 V G E VGEM Transient 30 V IC25 TC = 25 C 30 A Features IC90 TC = 90 C 15 A
ixgt15n120b.pdf
IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A
ixsh15n120bd1 ixst15n120bd1.pdf
IXSH 15N120BD1 HIGH Voltage IGBT IC25 = 30 A IXST 15N120BD1 with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C30 A TO-268 (
ixrp15n120.pdf
Advanced Technical Information IXRP 15N120 VCES = 1200 V IGBT with Reverse IC25 = 25 A Blocking capability VCE(sat) typ. = 2.5 V 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT IGBT with NPT (non punch through) Symbol Conditions Maximum Ratings structure VCES TVJ = 25 C to 150 C 1200 V reverse blocking capability VGES Conti
ixst15n120b.pdf
IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-2
ixgh15n120b ixgt15n120b.pdf
IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A
ixsa15n120b ixsp15n120b.pdf
Advance Technical Information IXSA 15N120B VCES =1200 V HIGH Voltage IGBT IXSP 15N120B IC25 = 30 A VCE(sat) = 3.4 V "S" Series - Improved SCSOA Capability TO-220AB (IXSP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V C (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C30 A TO-263 AA (
ixga15n120b2 ixgp15n120b2.pdf
VCES =1200 V IXGA 15N120B2 HiPerFASTTM IGBT IC25 = 30 A IXGP 15N120B2 VCE(sat) = 3.5 V Optimized for 10-25 KHz hard tfi(typ) = 137 ns switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 2
ixga15n120b ixgp15n120b.pdf
IXGA 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGP 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA
ixgp15n120c.pdf
VCES =1200 V IXGA 15N120C IGBT IC25 = 30 A IXGP 15N120C VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA (IXGA)
ixgh15n120b.pdf
IXGH 15N120B VCES = 1200 V HiPerFASTTM IGBT IXGT 15N120B IC25 = 30 A VCE(sat) = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C30 A TO-247 AD (IXGH) IC110 TC = 110 C15 A ICM TC = 25 C, 1 ms 60 A
ixga15n120c ixgp15n120c.pdf
VCES =1200 V IXGA 15N120C IGBT IC25 = 30 A IXGP 15N120C VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G C E IC25 TC = 25 C30 A IC90 TC = 90 C15 A ICM TC = 25 C, 1 ms 60 A TO-263 AA (IXGA)
ixst15n120bd1.pdf
IXSH 15N120BD1 HIGH Voltage IGBT IC25 = 30 A IXST 15N120BD1 with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C30 A TO-268 (
ixgh15n120cd1.pdf
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2
ixgh15n120bd1.pdf
Low VCE(sat) IGBT with Diode VDSS IC25 VCE(sat) High Speed IGBT with Diode IXGH/IXGT 15N120BD1 1200 V 30 A 3.2 V IXGH/IXGT 15N120CD1 1200 V 30 A 3.8 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247AD (IXGH) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V C E TAB VGEM Transient 30 V IC25 TC = 25 C30 A TO-2
ixgt15n120c.pdf
IXGH 15N120C VCES = 1200 V IGBT IXGT 15N120C IC25 = 30 A VCE(sat) = 3.8 V Lightspeed Series tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 1200 V G VGES Continuous 20 V E VGEM Transient 30 V (TAB) IC25 TC = 25 C30 A IC90 TC = 90 C15 A TO-247 AD (IXGH) ICM TC =
ngtb15n120flwg.pdf
NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di
ngtb15n120lwg.pdf
NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device
ngtb15n120ih.pdf
NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200
ngtg15n120fl2.pdf
NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef
ngtb15n120ihr.pdf
NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli
ngtb15n120fl2wg.pdf
NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on
ngtb15n120l.pdf
NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the device
ngtb15n120ihl.pdf
NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic
ngtg15n120fl2wg.pdf
NGTG15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. http //onsemi.com Features Extremely Ef
ngtb15n120fl2.pdf
NGTB15N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fa
fga15n120antdtu.pdf
FGA15N120ANTDTU 1200 V, 15 A NPT Trench IGBT Description Using ON Semiconductor's proprietary trench design and Features advanced NPT technology, the 1200V NPT IGBT offers NPT Trench Technology, Positive temperature coefficient superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. Low Saturation Voltage VCE(sat), typ = 1.9 V
ngtb15n120fl.pdf
NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free wheeling di
ngtb15n120ihrwg.pdf
NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli
ngtb15n120ihwg.pdf
NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200
fgw15n120h.pdf
http //www.fujielectric.com/products/semiconductor/ FGW15N120H Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 15A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abs
fgw15n120hd.pdf
http //www.fujielectric.com/products/semiconductor/ FGW15N120HD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 15A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Ab
fgw15n120vd.pdf
http //www.fujielectric.com/products/semiconductor/ FGW15N120VD Discrete IGBT Discrete IGBT (High-Speed V series) 1200V / 15A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Maximum Ratings and Characteristics Equivalent circu
tsg15n120cn.pdf
TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
tsg15n120.pdf
TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
kgt15n120nda.pdf
SEMICONDUCTOR KGT15N120NDA TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 + FEATURES _ d + 1.00 0.20 High spee
kgf15n120nds.pdf
SEMICONDUCTOR KGF15N120NDS TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanc
kgt15n120nds.pdf
SEMICONDUCTOR KGT15N120NDS TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT
kgf15n120kda.pdf
SEMICONDUCTOR KGF15N120KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand
kgh15n120nda.pdf
SEMICONDUCTOR KGH15N120NDA TECHNICAL DATA General Description KEC NPT IGBTs offer lowest losses and highest energy efficiency for application such as IH (induction heating), UPS, General inverter and other soft switching applications. FEATURES High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology MAXIMUM RATING (Ta=
kgt15n120kda.pdf
SEMICONDUCTOR KGT15N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely en
kgt15n120ndh.pdf
SEMICONDUCTOR KGT15N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT
jt015n120f7pd1e.pdf
IGBT IGBT Modules R IGBT JT015N120F7PD1E MAIN CHARACTERISTICS Package IC 15A 1200V V CES Vcesat_typ 1.8V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology
tp015n120ca.pdf
N N-CHANNEL IGBT R IGBT TP015N120CA MAIN CHARACTERISTICS Package IC 15 A VCES 1200 V Vcesat_typ 1.7V Vge=15V APPLICATIONS General purpose inverters Induction heating(IH) UPS UPS TO-247 FEATURES Low gate
brgh15n120d.pdf
BRGH15N120D Rev.A May.-2019 DATA SHEET / Descriptions TO-247 Insulated-Gate Bipolar Transistor in a TO-247 Plastic Package. / Features RoHS Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product. / Applications
brg15n120d.pdf
BRG15N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features RoHS Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product. / Applications
bt15n120anf.pdf
Silicon FS Planar IGBT R BT15N120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features Trench FS Technology, Positive temperature coef
brg15n120d.pdf
BRG15N120D /INSULATED-GATE BIPOLAR TRANSISTOR /Applications /General purpose inverter /Frequency converters /Induction Heating(IH) /Uninterrupted Power Supply(UPS) /Features /Low gate charge /Positive temperature coefficient /Lo
jng15n120hs2.pdf
JNG15N120HS2 JNG15N120HS2 IGBT Features 1200V,15A V =2.2V@V =15V,I =15A CE(sat)(typ.) GE C High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, genera
jng15n120ai.pdf
JNG15N120AI JNG15N120AI IGBT Features 1200V,15A VCE(sat)(typ.)=2.2V@VGE=15V,IC=15A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description JIAEN NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverte
sg15n12dp.pdf
SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M
sg15n12p.pdf
SG15N12P, SG15N12DP Discrete IGBTs Dimensions TO-220AB Dim. Inches Milimeter Min. Max. Min. Max. A 0.500 0.550 12.70 13.97 E B 0.580 0.630 14.73 16.00 C C 0.390 0.420 9.91 10.66 G D 0.139 0.161 3.54 4.08 E 0.230 0.270 5.85 6.85 G=Gate, C=Collector, E=Emitter F 0.100 0.125 2.54 3.18 G 0.045 0.065 1.15 1.65 H 0.110 0.230 2.79 5.84 J 0.025 0.040 0.64 1.01 K 0.100 BSC 2.54 BSC M
tgan15n120fdr.pdf
TGAN15N120FDR Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark T
tgan15n120nd.pdf
TGAN15N120ND NPT Trench IGBT Features 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN15N120ND TO-3PN TGAN15N120ND RoHS Absolute Maximum R
wmo15n12ts.pdf
WMO15N12TS 120V N-Channel Enhancement Mode Power MOSFET Description WMO15N12TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 120V, I = 14.5A DS D TO-252 R
bt15n120anf.pdf
Silicon FS Planar IGBT R BT15N120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features Trench FS Technology, Positive temperature coef
jjt15n120se.pdf
1200V 15A Trench and Field Stop IGBT JJT15N120SE Key performance V =1200V CE TO-247 I =15A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology Low collector to emitter saturation voltage G C Easy parallel switching capability E Short circuit withstands time 10 s High ruggedness performance RoHS compliant Applications
spt15n120f1t8tl.pdf
SPT15N120F1T8TL 1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CE switching losses, high energy efficiency and I 15 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) C microwave oven, etc. FEATURES Trench-Stop Technology offering High speed switching High ruggednes
spt15n120t1t8tl.pdf
SPT15N120T1T8TL 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A C improved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature s
vbgt15n120p.pdf
VBGT15N120P www.VBsemi.com General Description VBsemi IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RATING (Ta=25 )
vbgt15n120.pdf
VBGT15N120 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanc
dgw15n120ctl.pdf
RoHS DGW15N120CTL COMPLIANT IGBT Discrete V 1200 V CE I 15 A C V I =15A 1.85 V CE(SAT) C Applications Inverter for motor drive Circuit AC and DC servo drive amplifier Uninterruptible power supply Features Low V Trench-FS IGBT technology CE(sat) Maximum junction temperature 175 Positive temperature coefficient Including fast & sof
hm15n120a.pdf
IGBT Features 1200V,15A VCE(sat)(typ.)=2.6V@VGE=15V IC=15A High speed switching Higher system efficiency Soft current turn-off waveforms General Description IGBTs offer lower losses and higher energy efficiency H&M for application such as IH (induction heating),UPS, General inverter and other soft switching applications. Absolute
mpbw15n120bf.pdf
MPBW15N120BF 1200V-15A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Frequency converter positive temperature coefficient in VCEsat UPS Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBW15N120BF MP15N120BF TO-247-3 Maximum Rated Values
spt15n120f1.pdf
SPT15N120F1 1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CE switching losses, high energy efficiency and I 15 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) C microwave oven, etc. FEATURES Trench-Stop Technology offering High speed switching High ruggedness, t
spt15n120t1.pdf
SPT15N120T1 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A C improved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stab
ygw15n120t3.pdf
YGW15N120T3 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A C improved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution Short circuit withstand time 10 s High ruggedness, temperature stable Low V CE(SAT) Easy parallel switching
ygw15n120f1a.pdf
YGW15N120F1A 1200V /15A Trench Field Stop IGBT Lu-semi Field Stop Trench IGBTs offer low V 1200 V CE switching losses, high energy efficiency and I 15 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) C microwave oven, etc. FEATURES Trench-Stop Technology offering High speed switching High r
ap15n12d.pdf
AP15N12D 120V N-Channel Enhancement Mode MOSFET Description The AP15N12D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =15A DS D R
Otros transistores... BTS282ZE , 10N12 , 10N45 , 12N18 , 12N20 , 12N45 , 12N45A , 15N05 , BS170 , 15N45 , 17N60 , 2SJ374 , 2SK1009 , 2SK1010 , 2SK1011 , 2SK1012 , 2SK1013 .
History: 2SK2602 | XP161A11A1PR-G
History: 2SK2602 | XP161A11A1PR-G
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