2SK1023 Todos los transistores

 ..1. Size:200K  inchange semiconductor
 2sk1023.pdf

isc N-Channel MOSFET Transistor 2SK1023 DESCRIPTION Drain Current I =4A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

 0.1. Size:166K  fuji
 2sk1023-01.pdf

 8.1. Size:160K  fuji
 2sk1024-01.pdf

 8.2. Size:57K  fuji
 2sk1021.pdf

2SK1021

 8.3. Size:132K  no
 2sk1029.pdf

 8.4. Size:60K  inchange semiconductor
 2sk1022.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GS V Gat

 8.5. Size:223K  inchange semiconductor
 2sk1020.pdf

isc N-Channel MOSFET Transistor 2SK1020 DESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol

 8.6. Size:257K  inchange semiconductor
 2sk1029.pdf

isc N-Channel MOSFET Transistor 2SK1029 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 8.7. Size:200K  inchange semiconductor
 2sk1024.pdf

isc N-Channel MOSFET Transistor 2SK1024 DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra

 8.8. Size:200K  inchange semiconductor
 2sk1021.pdf

isc N-Channel MOSFET Transistor 2SK1021 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta