2SK1564 Todos los transistores

 ..1. Size:213K  inchange semiconductor
 2sk1564.pdf

isc N-Channel MOSFET Transistor 2SK1564 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

 8.1. Size:82K  renesas
 2sk1566.pdf

2SK1566, 2SK1567 Silicon N Channel MOS FET REJ03G0953-0200 (Previous ADE-208-1293) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name T

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 2sk1569.pdf

isc N-Channel MOSFET Transistor 2SK1569 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 8.3. Size:212K  inchange semiconductor
 2sk1565.pdf

isc N-Channel MOSFET Transistor 2SK1565 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

 8.4. Size:212K  inchange semiconductor
 2sk1562.pdf

isc N-Channel MOSFET Transistor 2SK1562 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.5. Size:213K  inchange semiconductor
 2sk1563.pdf

isc N-Channel MOSFET Transistor 2SK1563 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX