2SK1569 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK1569 Datasheet (PDF)

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isc N-Channel MOSFET Transistor 2SK1569DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for high efficiency switch mode power supply.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

8.1. Size:82K renesas
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2SK1566, 2SK1567 Silicon N Channel MOS FET REJ03G0953-0200 (Previous: ADE-208-1293) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: T

8.2. Size:212K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1565DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

8.3. Size:212K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK1562DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX