2SK1570 Todos los transistores

 ..1. Size:216K  inchange semiconductor
 2sk1570.pdf

isc N-Channel MOSFET Transistor 2SK1570 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.1. Size:120K  sanyo
 2sk1578.pdf

Ordering number EN4178A N-Channel Junction FET 2SK1578 Capacitor Microphone Applications Features Package Dimensions Especially suited for use in audio, telephone capaci- unit mm tor microphones. 2034A Excellent voltage characteristics. [2SK1578] Excellent transient characteristics. 2.2 4.0 Adoption of FBET process. 0.4 0.5 0.4 0.4 1 2 3 1 Source 1.3 1.3

 8.2. Size:82K  renesas
 2sk1573.pdf

2SK1573 Silicon N Channel MOS FET REJ03G0955-0200 (Previous ADE-208-1295) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D

 8.3. Size:96K  renesas
 rej03g0955 2sk1573ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:988K  renesas
 2sk1572.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:70K  renesas
 2sk1579.pdf

2SK1579 Silicon N Channel MOS FET REJ03G0956-0200 (Previous ADE-208-1296) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Suitable for low voltage operation Outline RENESAS Package code PLZZ0004CA-A (Package name UPAK R ) D 1 2 1. Gate 3 2. Drain G 3. Source 4 4. Drain S Note Markin

 8.6. Size:59K  inchange semiconductor
 2sk1574.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1574 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=500 (Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYM

 8.7. Size:216K  inchange semiconductor
 2sk1571.pdf

isc N-Channel MOSFET Transistor 2SK1571 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX