2SK1570 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK1570DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

Ordering number:EN4178AN-Channel Junction FET2SK1578Capacitor Microphone ApplicationsFeatures Package Dimensions Especially suited for use in audio, telephone capaci-unit:mmtor microphones.2034A Excellent voltage characteristics.[2SK1578] Excellent transient characteristics.2.24.0 Adoption of FBET process.0.40.50.40.41 2 31 : Source1.3 1.3

2SK1573 Silicon N Channel MOS FET REJ03G0955-0200 (Previous: ADE-208-1295) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1579 Silicon N Channel MOS FET REJ03G0956-0200 (Previous: ADE-208-1296) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Suitable for low voltage operation Outline RENESAS Package code: PLZZ0004CA-A(Package name: UPAK R )D12 1. Gate32. DrainG 3. Source44. DrainSNote: Markin

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1574 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYM

isc N-Channel MOSFET Transistor 2SK1571DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX