2SK1631 Todos los transistores

 ..1. Size:207K  inchange semiconductor
 2sk1631.pdf

isc N-Channel MOSFET Transistor 2SK1631 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

 8.2. Size:232K  renesas
 2sk1637.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:95K  renesas
 2sk1636.pdf

2SK1636(L), 2SK1636(S) Silicon N Channel MOS FET REJ03G0961-0200 (Previous ADE-208-1304) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AE-A RENESAS Pac

 8.4. Size:57K  nec
 2sk163.pdf

 8.5. Size:42K  panasonic
 2sk1635.pdf

 8.6. Size:34K  hitachi
 2sk1637 2sk2422.pdf

2SK1637, 2SK2422 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SK1637, 2SK2422 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating

 8.7. Size:216K  inchange semiconductor
 2sk1634.pdf

isc N-Channel MOSFET Transistor 2SK1634 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.8. Size:212K  inchange semiconductor
 2sk1630.pdf

isc N-Channel MOSFET Transistor 2SK1630 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.9. Size:213K  inchange semiconductor
 2sk1639.pdf

isc N-Channel MOSFET Transistor 2SK1639 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.10. Size:213K  inchange semiconductor
 2sk1638.pdf

isc N-Channel MOSFET Transistor 2SK1638 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.11. Size:212K  inchange semiconductor
 2sk1632.pdf

isc N-Channel MOSFET Transistor 2SK1632 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.12. Size:207K  inchange semiconductor
 2sk1633.pdf

isc N-Channel MOSFET Transistor 2SK1633 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.13. Size:214K  inchange semiconductor
 2sk1635.pdf

isc N-Channel MOSFET Transistor 2SK1635 DESCRIPTION Drain Current I = 50A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current, low voltage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 60 V DSS GS V Gate-Sour