2SK1634 Todos los transistores

 

2SK1634 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1634
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO-3PN

 Búsqueda de reemplazo de MOSFET 2SK1634

 

2SK1634 Datasheet (PDF)

 ..1. Size:216K  inchange semiconductor
2sk1634.pdf

2SK1634
2SK1634

isc N-Channel MOSFET Transistor 2SK1634DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.2. Size:232K  renesas
2sk1637.pdf

2SK1634
2SK1634

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:95K  renesas
2sk1636.pdf

2SK1634
2SK1634

2SK1636(L), 2SK1636(S) Silicon N Channel MOS FET REJ03G0961-0200 (Previous: ADE-208-1304) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AE-A RENESAS Pac

 8.4. Size:57K  nec
2sk163.pdf

2SK1634
2SK1634

 8.5. Size:42K  panasonic
2sk1635.pdf

2SK1634

 8.6. Size:34K  hitachi
2sk1637 2sk2422.pdf

2SK1634
2SK1634

2SK1637, 2SK2422Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-220FMD1231. GateG2. Drain3. SourceS2SK1637, 2SK2422Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating

 8.7. Size:207K  inchange semiconductor
2sk1631.pdf

2SK1634
2SK1634

isc N-Channel MOSFET Transistor 2SK1631DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.8. Size:212K  inchange semiconductor
2sk1630.pdf

2SK1634
2SK1634

isc N-Channel MOSFET Transistor 2SK1630DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.9. Size:213K  inchange semiconductor
2sk1639.pdf

2SK1634
2SK1634

isc N-Channel MOSFET Transistor 2SK1639DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.10. Size:213K  inchange semiconductor
2sk1638.pdf

2SK1634
2SK1634

isc N-Channel MOSFET Transistor 2SK1638DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.11. Size:212K  inchange semiconductor
2sk1632.pdf

2SK1634
2SK1634

isc N-Channel MOSFET Transistor 2SK1632DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.12. Size:207K  inchange semiconductor
2sk1633.pdf

2SK1634
2SK1634

isc N-Channel MOSFET Transistor 2SK1633DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =700V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.13. Size:214K  inchange semiconductor
2sk1635.pdf

2SK1634
2SK1634

isc N-Channel MOSFET Transistor 2SK1635DESCRIPTIONDrain Current I = 50A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current,low voltageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 60 VDSS GSV Gate-Sour

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: APT38N60SC6

 

 
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History: APT38N60SC6

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