2SK1674 Todos los transistores

 ..1. Size:215K  inchange semiconductor
 2sk1674.pdf

isc N-Channel MOSFET Transistor 2SK1674 DESCRIPTION Drain Current I =24A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 300 V DSS GS

 8.1. Size:96K  renesas
 rej03g0967 2sk1671ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:83K  renesas
 2sk1671.pdf

2SK1671 Silicon N Channel MOS FET REJ03G0967-0200 (Previous ADE-208-1312) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor drive Outline RENESAS Package code PRSS0004ZE-A (Package nam

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 2sk1679.pdf

isc N-Channel MOSFET Transistor 2SK1679 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

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 2sk1677.pdf

isc N-Channel MOSFET Transistor 2SK1677 DESCRIPTION Drain Current I =16A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

 8.5. Size:216K  inchange semiconductor
 2sk1678.pdf

isc N-Channel MOSFET Transistor 2SK1678 DESCRIPTION Drain Current I =16A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS