2SK1821 Todos los transistores

 ..1. Size:214K  inchange semiconductor
 2sk1821.pdf

isc N-Channel MOSFET Transistor 2SK1821 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chopper regulator and motor drive DC-DC converters UPS ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 0.1. Size:155K  fuji
 2sk1821-01m.pdf

N-channel MOS-FET 2SK1821-01M FAP-IIA Series 600V 6,5 2A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

 8.1. Size:60K  1
 2sk1824.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS (in mm) driven at 2.5 V. 0.3 0.05 0.1+0.1 0.05 Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the 2SK1824 is ideal for driving the actuator of power-saving

 8.2. Size:294K  toshiba
 2sk1827.pdf

2SK1827 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Unit mm Analog Switch Applications 4 V gate drive Low threshold voltage V = 0.8 2.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA SC-70 Characteristics Sy

 8.3. Size:294K  toshiba
 2sk1825.pdf

2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Unit mm Analog Switch Applications 4 V gate drive Low threshold voltage V = 0.8 2.5 V th High speed Enhancement-mode Small package Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA Characteristics Symbol Rat

 8.4. Size:318K  toshiba
 2sk1828.pdf

2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Unit mm Analog Switch Applications 2.5 V gate drive Low threshold voltage V = 0.5 1.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight 0.012 g (typ.) Maximum Ra

 8.5. Size:319K  toshiba
 2sk1826.pdf

2SK1826 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Unit mm Analog Switch Applications 4 V gate drive Low threshold voltage V = 0.8 2.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC TO-236MOD Maximum Ratings (Ta = = 25 C) = = JEITA SC-59 Characteristi

 8.6. Size:291K  toshiba
 2sk1829.pdf

2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Unit mm Analog Switch Applications 2.5 V gate drive Low threshold voltage V = 0.5 1.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA SC-70 Characteristics

 8.7. Size:1040K  kexin
 2sk1828-3.pdf

SMD Type MOSFET N-Channel MOSFET 2SK1828 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 50mA 1 2 RDS(ON) 40 (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-So

 8.8. Size:1031K  kexin
 2sk1828.pdf

SMD Type MOSFET N-Channel MOSFET 2SK1828 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V 1 2 ID = 50mA +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 40 (VGS = 2.5V) Low threshold voltage Vth = 0.5 1.5 V 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source V