2SK1821 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK1821DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChopper regulator and motor driveDC-DC convertersUPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

N-channel MOS-FET2SK1821-01MFAP-IIA Series 600V 6,5 2A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1824N-CHANNEL MOS FETFOR SWITCHINGThe 2SK1824 is a N-channel vertical type MOS FET that isPACKAGE DIMENSIONS (in mm)driven at 2.5 V.0.3 0.05 0.1+0.10.05Because this MOS FET can be driven on a low voltage andbecause it is not necessary to consider the drive current, the2SK1824 is ideal for driving the actuator of power-saving

2SK1827 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteristics Sy

2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Equivalent Circuit JEDEC Maximum Ratings (Ta == 25C) ==JEITA Characteristics Symbol Rat

2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC TO-236MODJEITA SC-59TOSHIBA 2-3F1FWeight: 0.012 g (typ.) Maximum Ra

2SK1826 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1826 High Speed Switching Applications Unit: mm Analog Switch Applications 4 V gate drive Low threshold voltage: V = 0.8~2.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC TO-236MODMaximum Ratings (Ta == 25C) ==JEITA SC-59Characteristi

2SK1829 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5~1.5 V th High speed Enhancement-mode Small package Marking Equivalent CircuitJEDEC Maximum Ratings (Ta == 25C) ==JEITA SC-70Characteristics

SMD Type MOSFETN-Channel MOSFET2SK1828SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 50mA1 2 RDS(ON) 40 (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-So

SMD Type MOSFETN-Channel MOSFET2SK1828SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = 20V1 2 ID = 50mA+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 40 (VGS = 2.5V) Low threshold voltage: Vth = 0.5~1.5 V1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V