2SK1937 Todos los transistores

isc N-Channel MOSFET Transistor 2SK1937 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 50

N-channel MOS-FET 2SK1937-01 FAP-IIA Series 500V 0,48 15A 125W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

isc N-Channel MOSFET Transistor 2SK1937-01 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a

2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII.5) 2SK1930 Chopper Regulator, DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 3.0 (typ.) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode Vth = 1.5 3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1934 Silicon N Channel MOS FET REJ03G0985-0200 (Previous ADE-208-1333) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source

2SK1933 Silicon N Channel MOS FET REJ03G0984-0300 (Previous ADE-208-1332) Rev.3.00 Apr 27, 2006 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source

N-channel MOS-FET 2SK1936-01 FAP-IIA Series 500V 0,76 10A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

N-channel MOS-FET 2SK1939-01 FAP-IIA Series 600V 1,2 8A 100W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

FUJI POWER MOSFET 2SK1938-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.5 0.3 0.3 Low on-resistance 0.2 15.5 3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 3.5 0.2 0.2 Applications 5.45 5.45 0.6+0.2 Switching r

isc N-Channel MOSFET Transistor 2SK1939-01 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

isc N-Channel MOSFET Transistor 2SK1938 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT

isc N-Channel MOSFET Transistor 2SK1938-01 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

isc N-Channel MOSFET Transistor 2SK1936 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc N-Channel MOSFET Transistor 2SK1939 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc N-Channel MOSFET Transistor 2SK1933 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V