2SK1983 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1983
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET 2SK1983

2SK1983 Datasheet (PDF)

..1. Size:216K inchange semiconductor
2sk1983.pdf

isc N-Channel MOSFET Transistor 2SK1983DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

0.1. Size:210K fuji
2sk1983-01.pdf

N-channel MOS-FET2SK1983-01FAP-IIA Series 900V 4 3A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equivale

8.1. Size:433K 1
2sk1988 2sk1989.pdf

8.2. Size:31K panasonic
2sk1980.pdf

Power F-MOS FETs 2SK19802SK1980Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15mJ3.4 0.38.5 0.26.0 0.5 1.0 0.1 VGSS=30V guaranteedHigh-speed switching : tf= 25nsNo secondary breakdown1.5max. 1.1max. ApplicationsNon-contact relay0.8 0.1 0.5max.Solenoid drive 2.54 0.3Motor drive5.08 0.5Control

8.3. Size:31K panasonic
2sk198.pdf

Silicon Junction FETs (Small Signal) 2SK1982SK198Silicon N-Channel JunctionUnit : mmFor low-frequency amplification+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15 Features High mutual conductance gm1 Low noise type Downsizing of sets by mini-type package and automatic insertion by3taping/magazine packing are available.2 Absolute Maximum Ratings (Ta = 25

8.4. Size:249K fuji
2sk1986-01.pdf

FUJI POWER MOSFET2SK1986-01N-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switchingTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS3. Source DC-DC convertersJEDEC TO-220ABGeneral purpose power amplifierEIAJ SC-46Equivalent c

8.5. Size:138K fuji
2sk1985-01mr.pdf

8.6. Size:212K fuji
2sk1981-01.pdf

N-channel MOS-FET2SK1981-01FAP-IIA Series 500V 0,76 10A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi

8.7. Size:148K fuji
2sk1982-01mr.pdf

8.8. Size:192K fuji
2sk1984-01mr.pdf

2SK1984-01MR N-channel MOS-FETFAP-IIA Series 900V 4 3A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equival

8.9. Size:212K inchange semiconductor
2sk1982.pdf

isc N-Channel MOSFET Transistor 2SK1982DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UN

8.10. Size:212K inchange semiconductor
2sk1984.pdf

isc N-Channel MOSFET Transistor 2SK1984DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNI

8.11. Size:215K inchange semiconductor
2sk1981.pdf

isc N-Channel MOSFET Transistor 2SK1981DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 V

8.12. Size:230K inchange semiconductor
2sk1982-01m.pdf

isc N-Channel MOSFET Transistor 2SK1982-01MDESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a

8.13. Size:213K inchange semiconductor
2sk1985.pdf

isc N-Channel MOSFET Transistor 2SK1985DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNI

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