2SK2003-01M Datasheet. Equivalente

 ..1. Size:212K  inchange semiconductor
 2sk2003-01m.pdf

isc N-Channel MOSFET Transistor 2SK2003-01M DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE

 0.1. Size:199K  fuji
 2sk2003-01mr.pdf

N-channel MOS-FET 2SK2003-01MR FAP-IIA Series 600V 2,4 4A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

 8.1. Size:148K  1
 2sk2000-r.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 8.2. Size:287K  toshiba
 2sk2009.pdf

2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Unit mm Analog Switch Applications High input impedance. Low gate threshold voltage V = 0.5 1.5 V th Excellent switching times t = 0.06 s (typ.) on t = 0.12 s (typ.) off Low drain-source ON resistance R = 1.2 (typ.) DS (ON) Small

 8.3. Size:82K  renesas
 2sk2007.pdf

2SK2007 Silicon N Channel MOS FET REJ03G0991-0200 (Previous ADE-208-1339) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC - DC converter, motor control Outline RENESAS Package code PRSS0004ZE-A (Package na

 8.4. Size:82K  renesas
 2sk2008.pdf

2SK2008 Silicon N Channel MOS FET REJ03G0992-0200 (Previous ADE-208-1340) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, motor control Outline RENESAS Package code PRSS0003ZA-A (Package na

 8.5. Size:210K  fuji
 2sk2002-01mr.pdf

N-channel MOS-FET 2SK2002-01MR FAP-IIA Series 600V 4,5 3A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

 8.6. Size:212K  inchange semiconductor
 2sk2002-01m.pdf

isc N-Channel MOSFET Transistor 2SK2002-01M DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE