2SK2003-01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2003-01M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 40 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 85 pF
Resistencia entre drenaje y fuente RDS(on): 2.4 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET 2SK2003-01M
2SK2003-01M Datasheet (PDF)
2sk2003-01m.pdf
isc N-Channel MOSFET Transistor 2SK2003-01MDESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE
2sk2003-01mr.pdf
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2sk2000-r.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.comFuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sk2009.pdf
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2sk2007.pdf
2SK2007 Silicon N Channel MOS FET REJ03G0991-0200 (Previous: ADE-208-1339) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC - DC converter, motor control Outline RENESAS Package code: PRSS0004ZE-A(Package na
2sk2008.pdf
2SK2008 Silicon N Channel MOS FET REJ03G0992-0200 (Previous: ADE-208-1340) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, motor control Outline RENESAS Package code: PRSS0003ZA-A(Package na
2sk2002-01mr.pdf
N-channel MOS-FET2SK2002-01MRFAP-IIA Series 600V 4,5 3A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
2sk2002-01m.pdf
isc N-Channel MOSFET Transistor 2SK2002-01MDESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
