2SK2003-01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2003-01M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 85 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de 2SK2003-01M MOSFET
2SK2003-01M Datasheet (PDF)
2sk2003-01m.pdf

isc N-Channel MOSFET Transistor 2SK2003-01MDESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE
2sk2003-01mr.pdf

N-channel MOS-FET2SK2003-01MRFAP-IIA Series 600V 2,4 4A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
2sk2000-r.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.comFuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sk2009.pdf

2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.06 s (typ.) ont = 0.12 s (typ.) off Low drain-source ON resistance: R = 1.2 (typ.) DS (ON) Small
Otros transistores... 2SK1974 , 2SK1976 , 2SK1981 , 2SK1982 , 2SK1983 , 2SK1984 , 2SK1985 , 2SK2002-01M , AON7410 , 2SK2019-01 , 2SK2020-01 , 2SK2021-01 , 2SK2022-01M , 2SK2024-01 , 2SK2025 , 2SK2026-01 , 2SK2028-01MR .
History: SLF5N65S | 12N06Z | VBZA4435 | FQD8N25TF | S-LBSS84LT1G | CMD50N06B | IPW65R280E6
History: SLF5N65S | 12N06Z | VBZA4435 | FQD8N25TF | S-LBSS84LT1G | CMD50N06B | IPW65R280E6



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