2SK2026-01 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK2026-01 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2026-01

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 85 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO-3PN

Búsqueda de reemplazo de 2SK2026-01 MOSFET

- Selecciónⓘ de transistores por parámetros

2SK2026-01 datasheet

..1. Size:186K fuji
2sk2026-01.pdf pdf_icon

..2. Size:219K inchange semiconductor
2sk2026-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2026-01 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

8.1. Size:145K fuji
2sk2028-01mr.pdf pdf_icon

8.2. Size:169K fuji
2sk2024-01.pdf pdf_icon

8.3. Size:225K fuji
2sk2021-01.pdf pdf_icon

N-channel MOS-FET 2SK2021-01 FAP-IIA Series 500V 1,6 5A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva

8.4. Size:204K fuji
2sk2020-01mr.pdf pdf_icon

N-channel MOS-FET 2SK2020-01MR FAP-IIA Series 500V 3 3,5A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

8.5. Size:182K fuji
2sk2027-01.pdf pdf_icon

8.6. Size:226K fuji
2sk2023-01.pdf pdf_icon

FUJI POWER MOSFET 2SK2023-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c

8.7. Size:195K fuji
2sk2022-01m.pdf pdf_icon

N-channel MOS-FET 2SK2022-01M FAP-IIA Series 500V 1,6 5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

8.8. Size:214K fuji
2sk2025-01.pdf pdf_icon

N-channel MOS-FET 2SK2025-01 FAP-IIA Series 600V 2,4 4A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva

8.9. Size:213K inchange semiconductor
2sk2028-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2028-01M DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a

8.10. Size:219K inchange semiconductor
2sk2024-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2024-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

8.11. Size:215K inchange semiconductor
2sk2021-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2021-01 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

8.12. Size:229K inchange semiconductor
2sk2020-01mr.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 )

8.13. Size:215K inchange semiconductor
2sk2027-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2027-01 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

8.14. Size:212K inchange semiconductor
2sk2020-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2020-01 DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a

8.15. Size:215K inchange semiconductor
2sk2023-01.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2023-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

8.16. Size:212K inchange semiconductor
2sk2022-01m.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2022-01M DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a

8.17. Size:215K inchange semiconductor
2sk2025.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK2025-01 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

Otros transistores... 2SK2002-01M , 2SK2003-01M , 2SK2019-01 , 2SK2020-01 , 2SK2021-01 , 2SK2022-01M , 2SK2024-01 , 2SK2025 , IRF1010E , 2SK2028-01MR , 2SK2050 , 2SK2052 , 2SK2080-01 , 2SK2116 , 2SK2117 , 2SK2118 , 2SK2144 .