2SK2028-01MR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2028-01MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 30 nS
Cossⓘ - Capacitancia de salida: 140 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de 2SK2028-01MR MOSFET
- Selecciónⓘ de transistores por parámetros
2SK2028-01MR datasheet
4.1. Size:213K inchange semiconductor
2sk2028-01.pdf 
isc N-Channel MOSFET Transistor 2SK2028-01M DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.2. Size:225K fuji
2sk2021-01.pdf
N-channel MOS-FET 2SK2021-01 FAP-IIA Series 500V 1,6 5A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva
8.3. Size:204K fuji
2sk2020-01mr.pdf
N-channel MOS-FET 2SK2020-01MR FAP-IIA Series 500V 3 3,5A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ
8.5. Size:226K fuji
2sk2023-01.pdf
FUJI POWER MOSFET 2SK2023-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c
8.6. Size:195K fuji
2sk2022-01m.pdf
N-channel MOS-FET 2SK2022-01M FAP-IIA Series 500V 1,6 5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv
8.8. Size:214K fuji
2sk2025-01.pdf
N-channel MOS-FET 2SK2025-01 FAP-IIA Series 600V 2,4 4A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva
8.9. Size:219K inchange semiconductor
2sk2024-01.pdf
isc N-Channel MOSFET Transistor 2SK2024-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
8.10. Size:215K inchange semiconductor
2sk2021-01.pdf
isc N-Channel MOSFET Transistor 2SK2021-01 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.11. Size:229K inchange semiconductor
2sk2020-01mr.pdf
isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 )
8.12. Size:215K inchange semiconductor
2sk2027-01.pdf
isc N-Channel MOSFET Transistor 2SK2027-01 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.13. Size:212K inchange semiconductor
2sk2020-01.pdf
isc N-Channel MOSFET Transistor 2SK2020-01 DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.14. Size:215K inchange semiconductor
2sk2023-01.pdf
isc N-Channel MOSFET Transistor 2SK2023-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.15. Size:212K inchange semiconductor
2sk2022-01m.pdf
isc N-Channel MOSFET Transistor 2SK2022-01M DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.16. Size:219K inchange semiconductor
2sk2026-01.pdf
isc N-Channel MOSFET Transistor 2SK2026-01 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
8.17. Size:215K inchange semiconductor
2sk2025.pdf
isc N-Channel MOSFET Transistor 2SK2025-01 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
Otros transistores... 2SK2003-01M
, 2SK2019-01
, 2SK2020-01
, 2SK2021-01
, 2SK2022-01M
, 2SK2024-01
, 2SK2025
, 2SK2026-01
, IRFB3607
, 2SK2050
, 2SK2052
, 2SK2080-01
, 2SK2116
, 2SK2117
, 2SK2118
, 2SK2144
, 2SK2147-01
.
History: RQA0004LXAQS
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