2SK2116 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2116
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET 2SK2116

2SK2116 Datasheet (PDF)

..1. Size:32K hitachi
2sk2116 2sk2117.pdf

2SK2116, 2SK2117Silicon N-Channel MOS FETADE-208-1347 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulatorOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2116, 2SK2117Ordering InformationType No. VD

..2. Size:213K inchange semiconductor
2sk2116.pdf

isc N-Channel MOSFET Transistor 2SK2116DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VD

8.1. Size:59K 1
2sk2112.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2112N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2SK2112 is a N-channel MOS FET of a vertical type andPACKAGE DIMENSIONS (in mm)is a switching element that can be directly driven by the output of4.5 0.1an IC operating at 5 V.1.6 0.2 1.5 0.1This product has a low ON resistance and superb switchingcharacteristics and is idea

8.2. Size:119K 1
2sk2110.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2110N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2110 is a N-channel MOSFET of a vertical type 4.5 0.1and is a switching element that can be directly driven by the output of an IC operating at 5 V. 1.6 0.2 1.5 0.1 This product has a low on-state resistance and superb switching charact

8.3. Size:223K toshiba
2sk211.pdf

8.4. Size:33K hitachi
2sk2114 2sk2115.pdf

2SK2114, 2SK2115Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulatorOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2114, 2SK2115Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to so

8.5. Size:28K hitachi
2sk2118.pdf

2SK2118Silicon N-Channel MOS FETADE-208-1348 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor ControlOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2118Absolute Maximum Rat

8.6. Size:941K kexin
2sk2112.pdf

SMD Type MOSFETN-Channel MOSFET2SK21121.70 0.1 Features VDS (V) = 100V ID = 1 A0.42 0.10.46 0.1 RDS(ON) 0.8 (VGS = 10V)Drain (D) RDS(ON) 1.2 (VGS = 4V)1.Gate2.DrainGate (G)Internal diode3.SourceGate protectiondiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100

8.7. Size:937K kexin
2sk2110.pdf

SMD Type MOSFETN-Channel MOSFET2SK21101.70 0.1 Features VDS (V) = 100V ID = 0.5 ADrain (D)0.42 0.10.46 0.1 RDS(ON) 1.2 (VGS = 10V) RDS(ON) 1.5 (VGS = 4V)Gate (G)1.GateInternal diode2.DrainGate3.SourceprotectiondiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 10

8.8. Size:662K kexin
2sk2111.pdf

SMD Type MOSFETN-Channel MOSFET2SK21111.70 0.1 Features VDS (V) = 60V ID = 1 ADrain (D) RDS(ON) 0.45 (VGS = 10V) 0.42 0.10.46 0.1 RDS(ON) 0.6 (VGS = 4V)Gate (G)Internal diode1.GateGate protection2.Draindiode3.SourceSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V

8.9. Size:213K inchange semiconductor
2sk2118.pdf

isc N-Channel MOSFET Transistor 2SK2118DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

8.10. Size:212K inchange semiconductor
2sk2114.pdf

isc N-Channel MOSFET Transistor 2SK2114DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VD

8.11. Size:213K inchange semiconductor
2sk2117.pdf

isc N-Channel MOSFET Transistor 2SK2117DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VD

8.12. Size:212K inchange semiconductor
2sk2115.pdf

isc N-Channel MOSFET Transistor 2SK2115DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSHigh speed power switchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSuitable for Switching regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta

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