2SK2147-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2147-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 80 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 Vtrⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
Paquete / Cubierta: TO-3PML
Búsqueda de reemplazo de MOSFET 2SK2147-01
2SK2147-01 Datasheet (PDF)
2sk2147-01.pdf
isc N-Channel MOSFET Transistor 2SK2147-01DESCRIPTIONDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM
2sk2141.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2141SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2141 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.2FEATURES3.2 0.22.7 0.2 Low On-state ResistanceRDS(on) = 1.1 MAX. (VGS = 10 V, ID = 3
2sk2140 2sk2140-z.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2140, 2SK2140-ZSWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect(in millimeters)Transistor designed for high voltage switching applications.10.6 MAX. 4.8 MAX.3.6 0.2FEATURES1.3 0.210.0 Low On-state ResistanceRDS(on) = 1.5 MAX.
2sk2145.pdf
2SK2145 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK2145 Audio Frequency Low Noise Amplifier Applications Unit: mm Including two devices in SM5 (super mini type with 5 leads.) High |Y |: |Y | = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = -50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 k
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk2148-01.pdf
N-channel MOS-FET2SK2148-01FAP-IIA Series 600V 0,75 12A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equi
2sk2144.pdf
2SK2144Silicon N-Channel MOS FETADE-208-1349 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converterOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2144Absolute Maximum Ratings (Ta = 25
2sk213 2sk214 2sk215 2sk216.pdf
2SK213, 2SK214, 2SK215, 2SK216Silicon N-Channel MOS FETApplicationHigh frequency and low frequency power amplifier, high speed switching.Complementary pair with 2SJ76, J77, J78, J79Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-modeOutlineTO-220AB1D231. GateG2. Source(Flange)3. D
2sk2144.pdf
isc N-Channel MOSFET Transistor 2SK2144DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk2149.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2149 DESCRIPTION Drain Current ID= 10A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500
2sk2146.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2146 DESCRIPTION Drain Current ID= 2A@ TC=25 Drain Source Voltage- : VDSS= 250V(Min) Fast Switching Speed APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 250 V
2sk2148-01.pdf
isc N-Channel MOSFET Transistor 2SK2148-01DESCRIPTIONDrain Current I =12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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