2SK2251-01 Todos los transistores

 

2SK2251-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2251-01
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: TO220

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2SK2251-01 Datasheet (PDF)

 ..1. Size:178K  fuji
2sk2251-01.pdf

2SK2251-01
2SK2251-01

N-channel MOS-FET2SK2251-01FAP-IIA Series 250V 2 2A 20W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equivale

 ..2. Size:218K  inchange semiconductor
2sk2251-01.pdf

2SK2251-01
2SK2251-01

isc N-Channel MOSFET Transistor 2SK2251-01DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.1. Size:169K  fuji
2sk2253-01m.pdf

2SK2251-01
2SK2251-01

N-channel MOS-FET2SK2253-01MFAP-IIA Series 250V 0,5 8A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

 8.2. Size:180K  fuji
2sk2252-01l-01s.pdf

2SK2251-01
2SK2251-01

N-channel MOS-FET2SK2252-01L,SFAP-IIA Series 250V 0,5 8A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

 8.3. Size:174K  fuji
2sk2258-01.pdf

2SK2251-01
2SK2251-01

 8.4. Size:178K  fuji
2sk2257-01.pdf

2SK2251-01
2SK2251-01

 8.5. Size:201K  fuji
2sk2255-01mr.pdf

2SK2251-01
2SK2251-01

2SK2255-01MR N-channel MOS-FETFAP-IIA Series 250V 0,18 18A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converterswww.DataSheet4U.com- General Purpose Power Amplifier> Maximum Ratings and

 8.6. Size:215K  inchange semiconductor
2sk2253-01m.pdf

2SK2251-01
2SK2251-01

isc N-Channel MOSFET Transistor 2SK2253-01MDESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

 8.7. Size:209K  inchange semiconductor
2sk2258.pdf

2SK2251-01
2SK2251-01

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2258FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 8.8. Size:222K  inchange semiconductor
2sk2257-01.pdf

2SK2251-01
2SK2251-01

isc N-Channel MOSFET Transistor 2SK2257-01DESCRIPTIONDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 8.9. Size:221K  inchange semiconductor
2sk2257.pdf

2SK2251-01
2SK2251-01

isc N-Channel MOSFET Transistor 2SK2257DESCRIPTIONDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

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