2SK2291 Todos los transistores

 

2SK2291 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2291
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 55 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 45 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de encendido (ton): 240 nS
   Conductancia de drenaje-sustrato (Cd): 1530 pF
   Resistencia entre drenaje y fuente RDS(on): 0.02 Ohm
   Paquete / Cubierta: TO-220F

 Búsqueda de reemplazo de MOSFET 2SK2291

 

2SK2291 Datasheet (PDF)

 ..1. Size:348K  shindengen
2sk2291.pdf

2SK2291
2SK2291

 ..2. Size:214K  inchange semiconductor
2sk2291.pdf

2SK2291
2SK2291

isc N-Channel MOSFET Transistor 2SK2291DESCRIPTIONDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

 8.1. Size:135K  rohm
2sk2294 1-5.pdf

2SK2291
2SK2291

 8.2. Size:137K  rohm
2sk2299n 1-5.pdf

2SK2291
2SK2291

 8.3. Size:140K  rohm
2sk2294.pdf

2SK2291
2SK2291

TransistorsSwitching (800V, 3A)2SK2294FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications10

 8.4. Size:142K  rohm
2sk2299n.pdf

2SK2291
2SK2291

TransistorsSwitching (450V, 7A)2SK2299NFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications1

 8.5. Size:213K  inchange semiconductor
2sk2299.pdf

2SK2291
2SK2291

isc N-Channel MOSFET Transistor 2SK2299DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: KNP3508A

 

 
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History: KNP3508A

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