2SK2299 Todos los transistores

 

2SK2299 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2299
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: TO-220F

 Búsqueda de reemplazo de MOSFET 2SK2299

 

2SK2299 Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
2sk2299.pdf

2SK2299
2SK2299

isc N-Channel MOSFET Transistor 2SK2299DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS

 0.1. Size:137K  rohm
2sk2299n 1-5.pdf

2SK2299
2SK2299

 0.2. Size:142K  rohm
2sk2299n.pdf

2SK2299
2SK2299

TransistorsSwitching (450V, 7A)2SK2299NFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications1

 8.1. Size:135K  rohm
2sk2294 1-5.pdf

2SK2299
2SK2299

 8.2. Size:140K  rohm
2sk2294.pdf

2SK2299
2SK2299

TransistorsSwitching (800V, 3A)2SK2294FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications10

 8.3. Size:348K  shindengen
2sk2291.pdf

2SK2299
2SK2299

 8.4. Size:214K  inchange semiconductor
2sk2291.pdf

2SK2299
2SK2299

isc N-Channel MOSFET Transistor 2SK2291DESCRIPTIONDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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