2SK2590 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK2590Silicon N-Channel MOS FETPreliminaryApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter, Motor ControlOutline2SK2590Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 200 VGate to

isc N-Channel MOSFET Transistor 2SK2590DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2598 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 0.18 (typ.) High forward transfer admittance : |Y | = 13 S (typ.) fs Low leakage current : I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V

2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2599 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 2.9 (typ.) High forward transfer admittance : |Y | = 1.7 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (

Ordering number : EN5450 2SK2592SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2592ApplicationsFeatures Low ON-resistance. High-speed diode. Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountablepackage.SpecificationsAbsolute Maximum Ratings at Ta=25 CP

2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0401 Rev.4.01 Jan 30, 2006 Features High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, D = 50% min. (f = 836.5 MHz) Compact package capable of surface mounting Outline RENESAS Package code : PLSS0003ZA-A(Package Name : RP8P)D1G31. Gate22. SourceS 3. DrainNo

2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, D = 45%min. (f = 836.5 MHz) Compact package capable of surface mounting Outline RENESAS package code: PLZZ0004CA-A(Package name: UPAK R )3121. Gate32. Source13. Drain4.

Silicon Junction FETs (Small Signal) 2SK25932SK2593Silicon N-Channel JunctionUnit : mmFor low-frequency amplification1.6 0.15For switching0.4 0.8 0.1 0.4 Features1 Low noise, high gain3 High gate-drain voltage VGDO Downsizing of sets by mini-type package and automatic insertion by2taping/magazine packing are available. Absolute Maximum Ratings (Tc = 25C)0

isc N-Channel MOSFET Transistor 2SK259DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM