2SK845 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK845
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 40 W
   Voltaje máximo drenador - fuente |Vds|: 450 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Resistencia entre drenaje y fuente RDS(on): 1.3 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET 2SK845

2SK845 Datasheet (PDF)

..1. Size:199K inchange semiconductor
2sk845.pdf

isc N-Channel MOSFET Transistor 2SK845DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

9.1. Size:198K inchange semiconductor
2sk843.pdf

isc N-Channel MOSFET Transistor 2SK843DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 60 VDSS GSV Gate-Source

9.2. Size:200K inchange semiconductor
2sk846.pdf

isc N-Channel MOSFET Transistor 2SK846DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 900 VDSS GS

9.3. Size:60K inchange semiconductor
2sk849.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK849 DESCRIPTION Drain Current ID=40A@ TC=25 Drain Source Voltage- : VDSS=60V(Min) APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATIN

9.4. Size:199K inchange semiconductor
2sk844.pdf

isc N-Channel MOSFET Transistor 2SK844DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 100 VDSS GSV Gate-Source

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NP82N055NUG

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