3N55 Todos los transistores

 ..1. Size:227K  inchange semiconductor
 3n55.pdf

isc N-Channel MOSFET Transistor 3N55 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 550V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies,converters,AC and DC motor controls ABSOLUTE MA

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 mtp3n55.pdf

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE MTP3N55 PH (561) 283-4500 FAX (561) 286-8914 Website http //www.semi-tech-inc.com CASE OUTLINE TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING Drain Source Voltage VDSS 550 Vdc Drain Gate Voltage VDGR 550 Vdc Drain Current Continuous ID 3

 0.2. Size:231K  isahaya
 rt3n55m.pdf

RT3N55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT3N55M is composite transistor built with two 1.25 RT1N144 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver