40N05 Todos los transistores

isc N-Channel MOSFET Transistor 40N05 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Static Drain-Source On-Resistance R = 0.035 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies,converters,AC and DC motor controls ABSOLUTE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

4V Drive Nch MOSFET RVQ040N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbol QG Switching Packaging specif

RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline (6) VDSS TSMT6 45V (5) (4) RDS(on) (Max.) 53mW (1) ID 4A (2) PD 1.25W (3) lFeatures lInner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant *1 E

SUM40N05-19L Vishay Siliconix N-Channel 55-V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.019 at VGS = 10 V 40 RoHS* 55 0.025 at VGS = 4.5 V 35 COMPLIANT D TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information SUM40N05-19L-E3 (Lead

Advance Technical Information TrenchT2TM VDSS = 55V IXTH440N055T2 ID25 = 440A Power MOSFET IXTT440N055T2 RDS(on) 1.8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSS Continuous

Advance Technical Information IXTL2x240N055T VDSS =55 V TrenchMVTM ID25 = 2x140 A Power MOSFETs RDS(on) 4.4 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG RG ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RG

Preliminary Technical Information IXTH240N055T VDSS = 55 V TrenchMVTM IXTQ240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V ID25 TC = 25 C 240

Preliminary Technical Information IXTA240N055T VDSS = 55 V TrenchMVTM IXTP240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2

Preliminary Technical Information VDSS = 55 V IXTA240N055T7 TrenchMVTM ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V 1 ID25 TC = 25 C 240 A 7