40N05 Datasheet. Equivalente

 ..1. Size:216K  inchange semiconductor
 40n05.pdf

isc N-Channel MOSFET Transistor 40N05 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 50V(Min) DSS Static Drain-Source On-Resistance R = 0.035 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies,converters,AC and DC motor controls ABSOLUTE

 0.1. Size:337K  st
 stp40n05.pdf

 0.2. Size:328K  st
 stv40n05.pdf

 0.3. Size:291K  renesas
 np40n055che np40n055dhe np40n055ehe np40n055khe np40n055mhe np40n055nhe.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.4. Size:293K  renesas
 np40n055cle np40n055dle np40n055ele np40n055kle np40n055mle np40n055nle.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.5. Size:208K  rohm
 rvq040n05.pdf

4V Drive Nch MOSFET RVQ040N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbol QG Switching Packaging specif

 0.6. Size:604K  rohm
 rvq040n05tr.pdf

RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline (6) VDSS TSMT6 45V (5) (4) RDS(on) (Max.) 53mW (1) ID 4A (2) PD 1.25W (3) lFeatures lInner circuit (1) Drain 1) Low on - resistance. (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant *1 E

 0.7. Size:100K  vishay
 sum40n05-19l.pdf

SUM40N05-19L Vishay Siliconix N-Channel 55-V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.019 at VGS = 10 V 40 RoHS* 55 0.025 at VGS = 4.5 V 35 COMPLIANT D TO-263 G DRAIN connected to TAB G D S Top View S Ordering Information SUM40N05-19L-E3 (Lead

 0.8. Size:187K  ixys
 ixth440n055t2 tt440n055t2.pdf

Advance Technical Information TrenchT2TM VDSS = 55V IXTH440N055T2 ID25 = 440A Power MOSFET IXTT440N055T2 RDS(on) 1.8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSS Continuous

 0.9. Size:66K  ixys
 ixtl2x240n055t.pdf

Advance Technical Information IXTL2x240N055T VDSS =55 V TrenchMVTM ID25 = 2x140 A Power MOSFETs RDS(on) 4.4 m Common-Gate Pair DD (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated RG RG ISOPLUS i5-PakTM (IXTL) S G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RG

 0.10. Size:204K  ixys
 ixth240n055t ixtq240n055t.pdf

Preliminary Technical Information IXTH240N055T VDSS = 55 V TrenchMVTM IXTQ240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V ID25 TC = 25 C 240

 0.11. Size:173K  ixys
 ixta240n055t ixtp240n055t.pdf

Preliminary Technical Information IXTA240N055T VDSS = 55 V TrenchMVTM IXTP240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2

 0.12. Size:162K  ixys
 ixta240n055t7.pdf

Preliminary Technical Information VDSS = 55 V IXTA240N055T7 TrenchMVTM ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V 1 ID25 TC = 25 C 240 A 7

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 ixtc240n055t.pdf

 0.14. Size:733K  bruckewell
 ms40n05.pdf

MS40N05 N-Channel 40-V (D-S) MOSFET Description Graphic Symbol The MS40N05 is a high performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the small DS(ON) power switching and load switch applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features Pac