SML1002RBN Todos los transistores

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SML1002RBN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML1002RBN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 240 W

Tensión drenaje-fuente (Vds): 1000 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1800 pF

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: TO247

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SML1002RBN Datasheet (PDF)

4.1. sml100h9.pdf Size:26K _semelab

SML1002RBN

SML100H9 TO–258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N–CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 1000V ID(cont) 9A Ω RDS(on) 1.100Ω 5.08 (0.200) 3.56 (0.140) BSC BSC • Faster Switching 1.65 (0.065) 1.39 (0.055) • Lower Le

4.2. sml100t21.pdf Size:19K _semelab

SML1002RBN

SML100T21 T247clip Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE 5.38 (0.212) 6.20 (0.244) HIGH VOLTAGE POWER MOSFETS 2 VDSS 1000V 1 2 3 2.87 (0.113) ID(cont) 21A 0.40 (0.016) 3.12 (0.123) 0.79 (0.031) 1.65 (0.065) 2.13 (0.084) RDS(on) 0.500 1.01 (0.040) 1.40 (0.0

4.3. sml1001rhn sml901rhn.pdf Size:18K _semelab

SML1002RBN

SML1001RHN SML901RHN0 TO–258 Package Outline. 4TH GENERATION MOSFET Dimensions in mm (Inches) 6.86 (0.270) 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) N–CHANNEL 0.88 (0.035) ENHANCEMENT MODE 4.19 (0.165) HIGH VOLTAGE 3.94 (0.155) Dia. 1 2 3 POWER MOSFETS D 5.08 (0.200) 3.56 (0.140) G BSC BSC 1.65 (0.065) 1.39 (0.055) S Typ. Pin 1 – Drain Pin 2 – Sourc

4.4. sml100j22.pdf Size:23K _semelab

SML1002RBN

SML100J22 SOT–227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N–CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

4.5. sml100c4.pdf Size:20K _semelab

SML1002RBN

SML100C4 TO–254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 6.32 (0.249) N–CHANNEL 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 VDSS 1000V ID(cont) 3.6A RDS(on) 4.00 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) 3.81 (0.150) BSC BSC • Faster Switching Pin 1 – Drain Pin 2

4.6. sml100b11.pdf Size:21K _semelab

SML1002RBN

SML100B11 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 1000V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 11A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 1.000 2.

4.7. sml100a9.pdf Size:20K _semelab

SML1002RBN

SML100A9 TO–3 Package Outline. Dimensions in mm (inches) N–CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 1000V 1 2 ID(cont) 9A 3 (case) Ω RDS(on) 1.100Ω 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) • Faster Switching • Lower Leakage Pin 1

4.8. sml100j19.pdf Size:23K _semelab

SML1002RBN

SML100J19 SOT–227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N–CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

4.9. sml100b13.pdf Size:21K _semelab

SML1002RBN

SML100B13 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 1000V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.860 2.

4.10. sml100s13.pdf Size:20K _semelab

SML1002RBN

SML100S13 D3PAK Package Outline. Dimensions in mm (inches) N–CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDS

4.11. sml100h11.pdf Size:26K _semelab

SML1002RBN

SML100H11 TO–258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N–CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 1000V ID(cont) 11A Ω RDS(on) 0.880Ω 5.08 (0.200) 3.56 (0.140) BSC BSC • Faster Switching 1.65 (0.065) 1.39 (0.055) • Lower

4.12. sml100w18.pdf Size:26K _semelab

SML1002RBN

SML100W18 TO–267 Package Outline. Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 1000V ID(cont) 17.3A Ω RDS(on) 0.570Ω • Faster Switching • Lower Leakage • TO–267 Hermetic Package D StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G incre

4.13. sml100j34.pdf Size:23K _semelab

SML1002RBN

SML100J34 SOT–227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N–CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

4.14. sml100s11.pdf Size:20K _semelab

SML1002RBN

SML100S11 D3PAK Package Outline. Dimensions in mm (inches) N–CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDS

4.15. sml1001r sml901r.pdf Size:60K _semelab

SML1002RBN

SML1001R1AN 1000V 9.5A 1.10 SML901R1AN 900V 9.5A 1.10 SEME SML1001R3AN 1000V 8.5A 1.30 SML901R3AN 900V 8.5A 1.30 LAB TO3 Package Outline. Dimensions in mm (Inches) POWER MOS IV™ N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25°C unless otherwise stated) SML Parameter 901R1AN 1001R1AN 901R3AN 1001R3AN Unit 900 1000 900 1000 V VDSS Drain – S

Otros transistores... SML1001RAN , SML1001RBN , SML1001RHN , SML10026DFN , SML1002R4AN , SML1002R4BN , SML1002R4CN , SML1002RAN , 2SK2545 , SML1002RCN , SML1004R2AN , SML1004R2BN , SML1004R2CN , SML1004R2GN , SML1004R2KN , SML1004RAN , SML1004RBN .

 


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