2SK1583 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1583
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 16 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 360 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: SC62

Búsqueda de reemplazo de 2SK1583 MOSFET

- Selección ⓘ de transistores por parámetros

2SK1583 Datasheet (PDF)

..1. Size:319K 1
2sk1583.pdf pdf_icon

..2. Size:1170K kexin
2sk1583.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15831.70 0.1 Features VDS (V) = 16V ID = 0.5 A0.42 0.1 RDS(ON) 2 (VGS = 2.5V) 0.46 0.1 RDS(ON) 1.5 (VGS = 4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 0.5A Pul

8.1. Size:302K 1
2sk1588.pdf pdf_icon

8.2. Size:144K 1
2sk1580.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1580SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1580 is an N -channel vertical type MOS FET which 2.10.1can be driven by 2.5 V power supply. 1.250.1 As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and

8.3. Size:276K 1
2sk1587.pdf pdf_icon

8.4. Size:302K 1
2sk1585.pdf pdf_icon

8.5. Size:391K 1
2sk1589.pdf pdf_icon

8.6. Size:523K 1
2sk1582.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1582SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1582, N-channel vertical type MOS FET, is a 2.8 0.2switching device which can be driven directly by the output of +0.10.65 0.151.5ICs having a 5 V power source. The 2SK1582 has excellent switching characteristics and is 2suitable for use as a

8.7. Size:405K 1
2sk1581.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1581SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1581, N-channel vertical type MOS FET, can be 2.8 0.2driven by 2.5 V power supply. +0.10.65 0.151.5 As the 2SK1581 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances 2including VCR cam

8.8. Size:296K nec
2sk1586.pdf pdf_icon

8.9. Size:57K nec
2sk1584 nec.pdf pdf_icon

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1584N-CHANNEL MOS FETFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1584 is a switching device which can be driven directlyby a 5-V power source.4.50.1 ElectrodeConnection The 2SK1584 features a low on-state resistance and excellent1.50.11.60.2 1.Sourceswitching characteristics, and is suitable for applicati

8.10. Size:1044K kexin
2sk1588.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15881.70 0.1 Features VDS (V) = 16V ID = 3 A0.42 0.10.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 3A Puls

8.11. Size:1254K kexin
2sk1582-3.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1582SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 0.2 A1 2 RDS(ON) 5 (VGS = 4V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 3 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage V

8.12. Size:1205K kexin
2sk1589-3.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1589SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 0.1 A1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 30 (VGS = 4V)+0.11.9 -0.2 RDS(ON) 25 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volta

8.13. Size:1297K kexin
2sk1584.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15841.70 0.1 Features VDS (V) = 30V ID = 0.5 A0.42 0.10.46 0.1 RDS(ON) 1.5 (VGS = 10V) RDS(ON) 2 (VGS = 4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5A Pul

8.14. Size:889K kexin
2sk1587.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15871.70 0.1 Features VDS (V) = 16V ID = 2 A RDS(ON) 0.5 (VGS = 4V)0.42 0.10.46 0.1 RDS(ON) 0.8 (VGS = 2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 2A Puls

8.15. Size:1290K kexin
2sk1585.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15851.70 0.1 Features VDS (V) = 16V ID = 1 A0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 1.2 (VGS = 2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 1A Pulsed

8.16. Size:1007K kexin
2sk1586.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK15861.70 0.1 Features VDS (V) = 30V ID = 1 A RDS(ON) 0.6 (VGS = 10V)0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1A Pulsed

8.17. Size:1256K kexin
2sk1581-3.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1581SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 16V ID = 0.2 A1 2 RDS(ON) 5 (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 3 (VGS = 4V) 1.9 -0.21. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage V

8.18. Size:925K kexin
2sk1589.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1589SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 0.1 A1 2 RDS(ON) 30 (VGS = 4V) +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 25 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 1

8.19. Size:1002K kexin
2sk1582.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1582SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 0.2 A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 5 (VGS = 4V)+0.11.9-0.1 RDS(ON) 3 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

8.20. Size:976K kexin
2sk1581.pdf pdf_icon

SMD Type MOSFETN-Channel MOSFET2SK1581SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 16V ID = 0.2 A1 2 RDS(ON) 5 (VGS = 2.5V) +0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 3 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16

8.21. Size:1614K cn vbsemi
2sk1588.pdf pdf_icon

2SK1588www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

8.22. Size:2206K cn vbsemi
2sk1589-t1b.pdf pdf_icon

2SK1589-T1Bwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition100 2.8 at VGS = 10 V Low Threshold: 2 V (typ.)260 Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 20

Otros transistores... 2SK1500 , 2SK1501 , 2SK1502 , 2SK1549-R , 2SK1553-01MR , 2SK1580 , 2SK1581 , 2SK1582 , IRF520 , 2SK1584 , 2SK1585 , 2SK1586 , 2SK1587 , 2SK1588 , 2SK1589 , 2SK1590 , 2SK1591 .