BUZ330 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUZ330
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 95 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO-218
Búsqueda de reemplazo de MOSFET BUZ330
BUZ330 Datasheet (PDF)
buz330.pdf
BUZ 330SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 330 500 V 9.5 A 0.6 TO-218 AA C67078-S3105-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 28 C 9.5Pulsed drain current IDpulsTC = 25 C 38Avalanche current,limited by Tjmax IA
buz330.pdf
isc N-Channel Mosfet Transistor BUZ330FEATURESHigh speed switchingLow RDS(ON)Easy driver for cost effective applicationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive power actuator driversMotor controlsDC-DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sourc
buz338.pdf
SIPMOS Power Transistor BUZ 338 N channel Enhancement mode Avalanche-rated1)Type VDS ID RDS (on) Package Ordering CodeBUZ 338 500 V 13.5 A 0.4 TO-218 AA C67078-S3126-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current, TC = 28 C ID 13.5 APulsed drain current, TC =25C ID puls 54Avalanche current, limited by Tj max IAR 13.5Avalanche energy, peri
buz332a.pdf
BUZ 332 ASIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 332 A 600 V 8 A 0.9 TO-218 AA C67078-S3123-A4Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 8Pulsed drain current IDpulsTC = 25 C 32Avalanche current,limited by Tjmax IA
buz334.pdf
BUZ 334SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 334 600 V 12 A 0.5 TO-218 AA C67078-S3130-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 26 C 12Pulsed drain current IDpulsTC = 25 C 48Avalanche current,limited by Tjmax IAR
buz339.pdf
BUZ 339SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 339 500 V 11.5 A 0.5 TO-218 AA C67078-S3133-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 33 C 11.5Pulsed drain current IDpulsTC = 25 C 46Avalanche current,limited by Tjmax
buz331.pdf
BUZ 331SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 331 500 V 8 A 0.8 TO-218 AA C67078-S3114-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 35 C 8Pulsed drain current IDpulsTC = 25 C 32Avalanche current,limited by Tjmax IAR 8
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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