MS23N26 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MS23N26
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 65 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.034 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de MS23N26 MOSFET
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MS23N26 datasheet
ms23n26.pdf
MS23N26 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel
ms23n22.pdf
MS23N22 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel
ms23n36.pdf
MS23N36 P-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless tel
Otros transistores... MS14P21 , MS15N50 , MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , IRFB3607 , MS23N36 , MS23P01 , MS23P21 , MS23P25 , MS23P39 , MS34N34 , MS3N80 , MS40N06 .
History: HM16N50F | TK50F15J1
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