MS85N06 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MS85N06 datasheet

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Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS85N06 60V N-Channel MOSFET FEATURES RDS(on) (Max 0.013 )@VGS=10V Gate Charge (Typical 70nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175 C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25 C unless o

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HMS85N03ED N-Channel Super Trench Power MOSFET Description The HMS85N03ED uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

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hms85n95 hms85n95d.pdf pdf_icon

HMS85N95, HMS85N95D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =95A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an extremel

Otros transistores... MS6N95 , MS70N03 , MS74N52 , MS74N62 , MS75N075 , MS75N75 , MS7N60 , MS7N80 , IRF1405 , MS8N50 , MS8N60 , MS99N45 , MS9N20E , MS9N90 , MSA4P21 , MSAER12N50A , MSAER30N20A .