MS8N60 Todos los transistores

 

MS8N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MS8N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.8 nS
   Cossⓘ - Capacitancia de salida: 121.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de MS8N60 MOSFET

   - Selección ⓘ de transistores por parámetros

 

MS8N60 Datasheet (PDF)

 ..1. Size:383K  bruckewell
ms8n60.pdf pdf_icon

MS8N60

MS8N60 N-Channel Enhancement Mode Power MOSFET Description The MS8N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple

 0.1. Size:757K  cn hmsemi
hms8n60k hms8n60i.pdf pdf_icon

MS8N60

HMS8N60I, HMS8N60KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applicati

 0.2. Size:975K  cn hmsemi
hms8n60 hms8n60f hms8n60d.pdf pdf_icon

MS8N60

HMS8N60D, HMS8N60, HMS8N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS@Tjmax 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power

 9.1. Size:933K  cn hmsemi
hms8n65 hms8n65f hms8n65d.pdf pdf_icon

MS8N60

HMS8N65D, HMS8N65, HMS8N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applic

Otros transistores... MS74N52 , MS74N62 , MS75N075 , MS75N75 , MS7N60 , MS7N80 , MS85N06 , MS8N50 , RU7088R , MS99N45 , MS9N20E , MS9N90 , MSA4P21 , MSAER12N50A , MSAER30N20A , MSAER38N10A , MSAER57N10A .

History: AP3P050M | IPD60R3K4CE | MCAC30N06Y-TP | KI5P04DS | G1007 | C2M120W040 | NCEP3065BQU

 

 
Back to Top

 


 
.