MTD6N20ET4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MTD6N20ET4G
   Código: 6N20E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 13.7 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 92 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
   Paquete / Cubierta: DPAK

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MTD6N20ET4G Datasheet (PDF)

..1. Size:124K onsemi
mtd6n20et4 mtd6n20et4g.pdf

MTD6N20EPower MOSFET6 A, 200 V, N-Channel DPAKThis advanced Power MOSFET is designed to withstand highenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fastrecovery time. Designed for low voltage, high speed switchinghttp://onsemi.comapplications in power supplies, converters and PWM motor controls,these de

6.1. Size:269K motorola
mtd6n20e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N20E/DDesigner's Data SheetMTD6N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.7 OHMenergy in the avalanche an

6.2. Size:129K onsemi
mtd6n20e-d.pdf

9.1. Size:231K motorola
mtd6n15r.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N15/DDesigner's Data SheetMTD6N15Power Field Effect TransistorDPAK for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETThis TMOS Power FET is designed for high speed, low loss6.0 AMPERESpower switching applications such as switching regulators, convert-150 VOLTSers, solenoid and re

9.2. Size:211K motorola
mtd6n10e.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N10E/DDesigner's Data SheetMTD6N10ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 6.0 AMPERES 100 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.400 OHMenergy in the avalanche

9.3. Size:70K onsemi
mtd6n15-d mtd6n15t4gv mtd6n15t4 mtd6n15t4g.pdf

MTD6N15Power Field Effect TransistorDPAK for Surface MountN-Channel Enhancement-Mode Silicon GateThis TMOS Power FET is designed for high speed, low loss powerswitching applications such as switching regulators, converters,http://onsemi.comsolenoid and relay drivers.V(BR)DSS RDS(on) MAX ID MAXFeatures150 V 0.3 W 6.0 A Silicon Gate for Fast Switching Speeds Low RDS(

9.4. Size:846K cn vbsemi
mtd6n15t4g.pdf

MTD6N15T4Gwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN

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