MTD6N20ET4G Todos los transistores

 ..1. Size:124K  onsemi
 mtd6n20et4 mtd6n20et4g.pdf

MTD6N20E Power MOSFET 6 A, 200 V, N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching http //onsemi.com applications in power supplies, converters and PWM motor controls, these de

 6.1. Size:269K  motorola
 mtd6n20e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N20E/D Designer's Data Sheet MTD6N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 6.0 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.7 OHM energy in the avalanche an

 6.2. Size:129K  onsemi
 mtd6n20e-d.pdf

MTD6N20E Power MOSFET 6 A, 200 V, N-Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching http //onsemi.com applications in power supplies, converters and PWM motor controls, these de

 9.1. Size:231K  motorola
 mtd6n15r.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N15/D Designer's Data Sheet MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for high speed, low loss 6.0 AMPERES power switching applications such as switching regulators, convert- 150 VOLTS ers, solenoid and re

 9.2. Size:211K  motorola
 mtd6n10e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N10E/D Designer's Data Sheet MTD6N10E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.400 OHM energy in the avalanche

 9.3. Size:70K  onsemi
 mtd6n15-d mtd6n15t4gv mtd6n15t4 mtd6n15t4g.pdf

MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, http //onsemi.com solenoid and relay drivers. V(BR)DSS RDS(on) MAX ID MAX Features 150 V 0.3 W 6.0 A Silicon Gate for Fast Switching Speeds Low RDS(

 9.4. Size:846K  cn vbsemi
 mtd6n15t4g.pdf

MTD6N15T4G www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.245 at VGS = 10 V 10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATIN