SML100C4 Todos los transistores

 

SML100C4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML100C4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 805 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm

Encapsulados: TO254

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SML100C4 datasheet

 ..1. Size:20K  semelab
sml100c4.pdf pdf_icon

SML100C4

SML100C4 TO 254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 6.32 (0.249) N CHANNEL 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 VDSS 1000V ID(cont) 3.6A RDS(on) 4.00 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) 3.81 (0.150) BSC BSC Faster Switching Pin 1 Drain Pin 2

 8.1. Size:105K  semelab
sml100m12msf.pdf pdf_icon

SML100C4

NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200 C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless othe

 8.2. Size:20K  semelab
sml100s13.pdf pdf_icon

SML100C4

SML100S13 D3PAK Package Outline. Dimensions in mm (inches) N CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDS

 8.3. Size:18K  semelab
sml1001rhn sml901rhn sml901r1hn.pdf pdf_icon

SML100C4

SML1001RHN SML901RHN0 TO 258 Package Outline. 4TH GENERATION MOSFET Dimensions in mm (Inches) 6.86 (0.270) 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) N CHANNEL 0.88 (0.035) ENHANCEMENT MODE 4.19 (0.165) HIGH VOLTAGE 3.94 (0.155) Dia. 1 2 3 POWER MOSFETS D 5.08 (0.200) 3.56 (0.140) G BSC BSC 1.65 (0.065) 1.39 (0.055) S Typ. Pin 1 Drain Pin 2 Sourc

Otros transistores... SML1004RAN , SML1004RBN , SML1004RCN , SML1004RGN , SML1004RKN , SML100A9 , SML100B11 , SML100B13 , IRFZ48N , SML100C6 , SML100H11 , SML100J19 , SML100J22 , SML100J34 , SML100L21 , SML100S11 , SML100S13 .

History: STV7NA40 | NTB6412AN | SML1004RBN | SML100J19 | IRFB4310ZGPBF

 

 

 

 

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