IPB80CN10N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB80CN10N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 4 nS
Cossⓘ - Capacitancia de salida: 76 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IPB80CN10N MOSFET
- Selecciónⓘ de transistores por parámetros
IPB80CN10N datasheet
..1. Size:705K infineon
ipb80cn10n ipd78cn10n ipi80cn10n ipp80cn10n ipu78cn10n.pdf 
IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi
9.1. Size:164K 1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf
IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
9.2. Size:155K infineon
ipp80n06s2-05 ipb80n06s2-05.pdf
IPB80N06S2-05 IPP80N06S2-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 4.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type
9.3. Size:173K infineon
ipi80p03p4l-04 ipp80p03p4l-04 ipb80p03p4l-04.pdf
IPB80P03P4L-04 IPI80P03P4L-04, IPP80P03P4L-04 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.1 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche
9.4. Size:158K infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf
IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l
9.5. Size:160K infineon
ipb80n04s4-04 ipi80n04s4-04 ipp80n04s4-04 ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf
IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.2 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P
9.6. Size:153K infineon
ipp80n04s2l-03 ipb80n04s2l-03.pdf
IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
9.7. Size:187K infineon
ipb80n04s3-04 ipi80n04s3-04 ipp80n04s3-04 ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf
IPB80N04S3-04 IPI80N04S3-04, IPP80N04S3-04 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 3.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche
9.8. Size:168K infineon
ipb80p03p4l-07 ipi80p03p4l-07 ipp80p03p4l-07 ipp80p03p4l-07 ipb80p03p4l-07 ipi80p03p4l-07.pdf
IPB80P03P4L-07 IPI80P03P4L-07, IPP80P03P4L-07 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 6.9 m DS(on) I -80 A D Features P-channel - Logic Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche
9.10. Size:228K infineon
ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf
IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 5.5 mW DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ
9.11. Size:132K infineon
ipb80n06s2l-11 ipp80n06s2l-11 ipi80n06s2l-11 ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 10.7 mW DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra lo
9.12. Size:159K infineon
ipb80n04s4l-04 ipi80n04s4l-04 ipp80n04s4l-04 ipp80n04s4l-04 ipb80n04s4l-04 ipi80n04s4l-04.pdf
IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 4.0 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ
9.13. Size:159K infineon
ipb80n04s2-04 ipp80n04s2-04 ipi80n04s2-04 ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04.pdf
IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.4 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
9.14. Size:155K infineon
ipb80n06s2l-09 ipp80n06s2l-09 ipp80n06s2l-09 ipb80n06s2l-09.pdf
IPB80N06S2L-09 IPP80N06S2L-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 8.3 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
9.15. Size:158K infineon
ipb80n04s4-03 ipi80n04s4-03 ipp80n04s4-03 ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf
IPB80N04S4-03 IPI80N04S4-03, IPP80N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 3.3 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type P
9.16. Size:192K infineon
ipb80n03s4l-03 ipi80n03s4l-04 ipp80n03s4l-04.pdf
IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 3.3 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low
9.17. Size:158K infineon
ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf
IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
9.18. Size:174K infineon
ipi80n06s4l-05 ipp80n06s4l-05 ipb80n06s4l-05.pdf
IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 4.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
9.19. Size:175K infineon
ipi80n06s4-07 ipp80n06s4-07 ipb80n06s4-07.pdf
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 7.1 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested T
9.20. Size:158K infineon
ipb80n06s2-07 ipp80n06s2-07 ipi80n06s2-07 ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07.pdf
IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 6.3 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
9.21. Size:155K infineon
ipb80n06s2l-07 ipp80n06s2l-07 ipp80n06s2l-07 ipb80n06s2l-07.pdf
IPB80N06S2L-07 IPP80N06S2L-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
9.22. Size:171K infineon
ipb80n06s4-07 ipi80n06s4-07 ipp80n06s4-07.pdf
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 7.1 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested T
9.23. Size:155K infineon
ipb80n06s2-h5 ipp80n06s2-h5 ipp80n06s2-h5 ipb80n06s2-h5.pdf
IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 5.2 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type
9.24. Size:290K infineon
ipb80p04p4l-08 ipi80p04p4l-08 ipp80p04p4l-08.pdf
IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 7.9 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested
9.25. Size:190K infineon
ipb80n04s2-h4 ipp80n04s2-h4 ipi80n04s2-h4 ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf
IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Ultra low Rds(on) 100% Avalanche tested Gre
9.26. Size:189K infineon
ipb80n06s3l-05.pdf
IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 4.5 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalan
9.27. Size:187K infineon
ipb80n03s4l-02 ipi80n03s4l-03 ipp80n03s4l-03 ipb80n03s4l-02 ipp i80n03s4l 03 ds.pdf
IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R (SMD version) 2.4 m DS(on),max I 80 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low
9.28. Size:170K infineon
ipb80n06s4l-07 ipi80n06s4l-07 ipp80n06s4l-07 ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf
IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 6.4 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
9.29. Size:157K infineon
ipb80n08s2l-07 ipp80n08s2l-07.pdf
IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
9.30. Size:225K infineon
ipb80p04p4-07 ipi80p04p4-07 ipp80p04p4-07.pdf
IPB80P04P4-07 IPI80P04P4-07, IPP80P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R (SMD Version) 7.4 mW DS(on) I -80 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche test
9.31. Size:170K infineon
ipb80n06s4-05 ipi80n06s4-05 ipp80n06s4-05 ipp80n06s4 ipb80n06s4 ipi80n06s4-05.pdf
IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 5.4 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested T
9.32. Size:155K infineon
ipp80n06s2l-h5 ipb80n06s2l-h5.pdf
IPB80N06S2L-H5 IPP80N06S2L-H5 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
9.33. Size:188K infineon
ipb80n04s3-06 ipi80n04s3-06 ipp80n04s3-06 ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf
IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 5.4 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche t
9.34. Size:169K infineon
ipb80p03p4-05 ipi80p03p4-05 ipp80p03p4-05 ipp80p03p4-05 ipb80p03p4-05 ipi80p03p4-05.pdf
IPB80P03P4-05 IPI80P03P4-05, IPP80P03P4-05 OptiMOS -P2 Power-Transistor Product Summary V -30 V DS R (SMD Version) 4.7 m DS(on) I -80 A D Features P-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche t
9.35. Size:170K infineon
ipb80n06s4l-05 ipi80n06s4l-05 ipp80n06s4l-05.pdf
IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 4.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
9.36. Size:164K infineon
ipb80n08s2-07.pdf
IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
9.37. Size:169K infineon
ipb80n04s3-h4 ipi80n04s3-h4 ipp80n04s3-h4.pdf
IPB80N04S3-H4 IPI80N04S3-H4, IPP80N04S3-H4 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 4.5 m DS(on),max I 80 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche
9.38. Size:461K infineon
ipb80p04p4l-04 ipi80p04p4l-04 ipp80p04p4l-04.pdf
IPB80P04P4L-04 IPI80P04P4L-04, IPP80P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) (SMD Version) 4.4 mW ID -80 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested
9.39. Size:155K infineon
ipb80n06s2-09 ipp80n06s2-09 ipp80n06s2-09 ipb80n06s2-09.pdf
IPB80N06S2-09 IPP80N06S2-09 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 8.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type
9.40. Size:160K infineon
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf
IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
9.41. Size:155K infineon
ipb80n06s2l-06 ipp80n06s2l-06 ipp80n06s2l-06 ipb80n06s2l-06.pdf
IPB80N06S2L-06 IPP80N06S2L-06 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 6.3 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
9.42. Size:339K inchange semiconductor
ipb80n04s2-04.pdf
isc N-Channel MOSFET Transistor IPB80N04S2-04 FEATURES Drain Current I 80A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC conve
Otros transistores... MTE8D0N08H8
, MTG9N50E
, MTH13N45
, MTH13N50
, MTH15N35
, IPU25CN10N
, IPB35CN10N
, IPU33CN10N
, IRFP260
, IPU78CN10N
, MTH15N40
, MTH20N15
, MTH5N100
, MTH5N95
, MTH6N100
, MTH6N100E
, MTH6N55
.
History: FQP30N06L
| MTM15N40E
| HM4953
| IRLB3813PBF
