SML100C6 Todos los transistores

 

SML100C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SML100C6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 1530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: TO254
 

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SML100C6 Datasheet (PDF)

 7.1. Size:20K  semelab
sml100c4.pdf pdf_icon

SML100C6

SML100C4TO254 Package Outline.Dimensions in mm (inches)13.59 (0.535) 6.32 (0.249)NCHANNEL13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS1 2 3VDSS 1000VID(cont) 3.6ARDS(on) 4.000.89 (0.035)1.14 (0.045)3.81 (0.150)3.81 (0.150) BSCBSC Faster SwitchingPin 1 Drain Pin 2

 8.1. Size:105K  semelab
sml100m12msf.pdf pdf_icon

SML100C6

NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25C unless othe

 8.2. Size:20K  semelab
sml100s13.pdf pdf_icon

SML100C6

SML100S13D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDS

 8.3. Size:18K  semelab
sml1001rhn sml901rhn sml901r1hn.pdf pdf_icon

SML100C6

SML1001RHNSML901RHN0TO258 Package Outline.4TH GENERATION MOSFETDimensions in mm (Inches)6.86 (0.270)6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)NCHANNEL0.88 (0.035)ENHANCEMENT MODE4.19 (0.165) HIGH VOLTAGE3.94 (0.155)Dia.1 2 3POWER MOSFETSD5.08 (0.200) 3.56 (0.140)GBSC BSC1.65 (0.065)1.39 (0.055)STyp.Pin 1 Drain Pin 2 Sourc

Otros transistores... SML1004RBN , SML1004RCN , SML1004RGN , SML1004RKN , SML100A9 , SML100B11 , SML100B13 , SML100C4 , STP65NF06 , SML100H11 , SML100J19 , SML100J22 , SML100J34 , SML100L21 , SML100S11 , SML100S13 , SML100T21 .

History: HYG060N08NS1P | IRF7456PBF-1 | HSP3105 | AMA931PE | STF5N80K5 | SFB083N80CC2 | NVBLS1D1N08H

 

 
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