SML100H11 Todos los transistores

SML100H11 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 1000V ID(cont) 11A RDS(on) 0.880 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower

SML100H9 TO 258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 1000V ID(cont) 9A RDS(on) 1.100 5.08 (0.200) 3.56 (0.140) BSC BSC Faster Switching 1.65 (0.065) 1.39 (0.055) Lower Le

SML100C4 TO 254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 6.32 (0.249) N CHANNEL 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1 2 3 VDSS 1000V ID(cont) 3.6A RDS(on) 4.00 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) 3.81 (0.150) BSC BSC Faster Switching Pin 1 Drain Pin 2

NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200 C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless othe

SML100S13 D3PAK Package Outline. Dimensions in mm (inches) N CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDS

SML1001RHN SML901RHN0 TO 258 Package Outline. 4TH GENERATION MOSFET Dimensions in mm (Inches) 6.86 (0.270) 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) N CHANNEL 0.88 (0.035) ENHANCEMENT MODE 4.19 (0.165) HIGH VOLTAGE 3.94 (0.155) Dia. 1 2 3 POWER MOSFETS D 5.08 (0.200) 3.56 (0.140) G BSC BSC 1.65 (0.065) 1.39 (0.055) S Typ. Pin 1 Drain Pin 2 Sourc

SML100B13 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 1000V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.860 2.

SML100B11 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 1000V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 11A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 1.000 2.

SML1001R1AN 1000V 9.5A 1.10 SML901R1AN 900V 9.5A 1.10 SEME SML1001R3AN 1000V 8.5A 1.30 SML901R3AN 900V 8.5A 1.30 LAB TO3 Package Outline. Dimensions in mm (Inches) POWER MOS IV N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS (Tcase =25 C unless otherwise stated) SML Parameter 901R1AN 1001R1AN 901R3AN 1001R3AN Unit 900 1000 900 1000 V VDSS Drain S

SML100S11 D3PAK Package Outline. Dimensions in mm (inches) N CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDS

SML100J22 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

SML100J19 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

SML100J34 SOT 227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3

SML100L16 TO 264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 1000V 1 2 3 2.29 (0.090) ID(cont) 21A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.500 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0

SML1004R2GXN SEME LAB 4TH GENERATION MOSFET TO 257 Package Outline. Dimensions in mm (inches) 4.83 (0.190) N CHANNEL 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) ENHANCEMENT MODE 1.14 (0.045) HIGH VOLTAGE 3.56 (0.140) Dia. 3.81 (0.150) ISOLATED POWER MOSFETS 1 2 3 VDSS 1000V ID(cont) 3.0A RDS(on) 4.20 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) 3.05 (0.120

SML100T21 T247clip Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE 5.38 (0.212) 6.20 (0.244) HIGH VOLTAGE POWER MOSFETS 2 VDSS 1000V 1 2 3 2.87 (0.113) ID(cont) 21A 0.40 (0.016) 3.12 (0.123) 0.79 (0.031) 1.65 (0.065) 2.13 (0.084) RDS(on) 0.500 1.01 (0.040) 1.40 (0.0

SML100W18 TO 267 Package Outline. Dimensions in mm (inches) N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 1000V ID(cont) 17.3A RDS(on) 0.570 Faster Switching Lower Leakage TO 267 Hermetic Package D StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G incre