2SK1585 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SK1585 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1585

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 16 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 260 nS

Cossⓘ - Capacitancia de salida: 107 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: SC62

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2SK1585 datasheet

..1. Size:302K 1
2sk1585.pdf pdf_icon

..2. Size:1290K kexin
2sk1585.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1585 1.70 0.1 Features VDS (V) = 16V ID = 1 A 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 1.2 (VGS = 2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID 1 A Pulsed

8.1. Size:302K 1
2sk1588.pdf pdf_icon

8.2. Size:144K 1
2sk1580.pdf pdf_icon

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1580 SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1580 is an N -channel vertical type MOS FET which 2.1 0.1 can be driven by 2.5 V power supply. 1.25 0.1 As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and

8.3. Size:319K 1
2sk1583.pdf pdf_icon

8.4. Size:276K 1
2sk1587.pdf pdf_icon

8.5. Size:391K 1
2sk1589.pdf pdf_icon

8.6. Size:523K 1
2sk1582.pdf pdf_icon

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1582 SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1582, N-channel vertical type MOS FET, is a 2.8 0.2 switching device which can be driven directly by the output of +0.1 0.65 0.15 1.5 ICs having a 5 V power source. The 2SK1582 has excellent switching characteristics and is 2 suitable for use as a

8.7. Size:405K 1
2sk1581.pdf pdf_icon

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1581 SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1581, N-channel vertical type MOS FET, can be 2.8 0.2 driven by 2.5 V power supply. +0.1 0.65 0.15 1.5 As the 2SK1581 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances 2 including VCR cam

8.8. Size:296K nec
2sk1586.pdf pdf_icon

8.9. Size:57K nec
2sk1584 nec.pdf pdf_icon

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1584 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1584 is a switching device which can be driven directly by a 5-V power source. 4.5 0.1 Electrode Connection The 2SK1584 features a low on-state resistance and excellent 1.5 0.1 1.6 0.2 1.Source switching characteristics, and is suitable for applicati

8.10. Size:1044K kexin
2sk1588.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1588 1.70 0.1 Features VDS (V) = 16V ID = 3 A 0.42 0.1 0.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID 3 A Puls

8.11. Size:1254K kexin
2sk1582-3.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1582 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID = 0.2 A 1 2 RDS(ON) 5 (VGS = 4V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 3 (VGS = 10V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V

8.12. Size:1205K kexin
2sk1589-3.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1589 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 100V ID = 0.1 A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 30 (VGS = 4V) +0.1 1.9 -0.2 RDS(ON) 25 (VGS = 10V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volta

8.13. Size:1297K kexin
2sk1584.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1584 1.70 0.1 Features VDS (V) = 30V ID = 0.5 A 0.42 0.1 0.46 0.1 RDS(ON) 1.5 (VGS = 10V) RDS(ON) 2 (VGS = 4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5 A Pul

8.14. Size:1170K kexin
2sk1583.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1583 1.70 0.1 Features VDS (V) = 16V ID = 0.5 A 0.42 0.1 RDS(ON) 2 (VGS = 2.5V) 0.46 0.1 RDS(ON) 1.5 (VGS = 4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID 0.5 A Pul

8.15. Size:889K kexin
2sk1587.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1587 1.70 0.1 Features VDS (V) = 16V ID = 2 A RDS(ON) 0.5 (VGS = 4V) 0.42 0.1 0.46 0.1 RDS(ON) 0.8 (VGS = 2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID 2 A Puls

8.16. Size:1007K kexin
2sk1586.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1586 1.70 0.1 Features VDS (V) = 30V ID = 1 A RDS(ON) 0.6 (VGS = 10V) 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS = 4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1 A Pulsed

8.17. Size:1256K kexin
2sk1581-3.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1581 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 16V ID = 0.2 A 1 2 RDS(ON) 5 (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 3 (VGS = 4V) 1.9 -0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V

8.18. Size:925K kexin
2sk1589.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1589 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 100V ID = 0.1 A 1 2 RDS(ON) 30 (VGS = 4V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 25 (VGS = 10V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 1

8.19. Size:1002K kexin
2sk1582.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1582 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V ID = 0.2 A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 5 (VGS = 4V) +0.1 1.9-0.1 RDS(ON) 3 (VGS = 10V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

8.20. Size:976K kexin
2sk1581.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET 2SK1581 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 16V ID = 0.2 A 1 2 RDS(ON) 5 (VGS = 2.5V) +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 RDS(ON) 3 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16

8.21. Size:1614K cn vbsemi
2sk1588.pdf pdf_icon

2SK1588 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

8.22. Size:2206K cn vbsemi
2sk1589-t1b.pdf pdf_icon

2SK1589-T1B www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 100 2.8 at VGS = 10 V Low Threshold 2 V (typ.) 260 Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 20

Otros transistores... 2SK1502 , 2SK1549-R , 2SK1553-01MR , 2SK1580 , 2SK1581 , 2SK1582 , 2SK1583 , 2SK1584 , IRFB31N20D , 2SK1586 , 2SK1587 , 2SK1588 , 2SK1589 , 2SK1590 , 2SK1591 , 2SK1592 , 2SK1593 .